Zobrazeno 1 - 8
of 8
pro vyhledávání: '"R. M. Ash"'
Publikováno v:
Water Science and Technology, Vol 87, Iss 7, Pp 1686-1702 (2023)
Rapid consumerism and improper waste disposal create widespread environmental degradation through the air, water sources and landfills in India's rural areas. This work develops a health risk prediction model to score villages based on quantitative a
Externí odkaz:
https://doaj.org/article/828b0001667244e5994135e15be80655
Autor:
N. Shorrocks, J. Harji, Ian Baker, Les Hipwood, R. M. Ash, L. Pillans, Peter Knowles, P. Abbott
Publikováno v:
SPIE Proceedings.
Detector arrays using Metal-Organic Vapour Phase Epitaxy (MOVPE) grown HgCdTe (MCT) on GaAs substrates have been in production at SELEX Galileo for over 10 years and are a mature technology for medium wave, long wave, and dual-band tactical applicati
Publikováno v:
SPIE Proceedings.
Raising the operating temperature of infrared detectors has benefits in terms of reduced cooler power and increased life and enables an overall reduction in size and weight for handheld applications. With MCT the composition can be tuned to achieve t
Publikováno v:
SPIE Proceedings.
This paper summarises measurements and calculations of HOT performance in Selex Galileo's MW detectors and demonstrates that high quality imagery can be achieved up to 175K. The benefits of HOT operation for cooler performance and power dissipation a
Autor:
R. M. Ash
Publikováno v:
Integrated Optoelectronics for Communication and Processing.
Publikováno v:
Journal of Crystal Growth. 77:629-636
A low-cost high-radiance Ga 1− x Al x As/GaAs LED has been developed using p-n junction isolation to achieve current confinement in an inverted Burrus LED structure. Junction isolation avoids the use of proton implantation techniques leading to a s
Publikováno v:
Fibre Optics '86.
LEDs have been fabricated by two routes using material grown by MOCVD in the GaAs/GaAlAs materials system. High internal quantum efficiencies have been achieved in both a simple junction isolated device and in a high specification proton isolated LED
Publikováno v:
Electronics Letters. 25:1530
Buried-ridge GRIN-SCH quantum-well lasers operating at 1·3 μm with an AlGaInAs continuously graded separate confinement region and with AlGaInAs quantum wells have been demonstrated with CW threshold currents of 65 mA.