Zobrazeno 1 - 10
of 71
pro vyhledávání: '"R. Lossy"'
Autor:
Trevor Martin, Anders Lundskog, Galia Pozina, David J. Wallis, Anelia Kakanakova-Georgieva, R. Lossy, Michael J. Uren, Erik Janzén, Martin Kuball, Joachim Würfl, J.O. Maclean, K.P. Hilton, James W Pomeroy, Gernot Riedel, R. Pazirandeh, Urban Forsberg, Frank Brunner
Publikováno v:
IEEE Electron Device Letters. 30:103-106
Currently, up to 50% of the channel temperature in AlGaN/GaN electronic devices is due to the thermal-boundary resistance (TBR) associated with the nucleation layer (NL) needed between GaN and SiC substrates for high-quality heteroepitaxy. Using 3-D
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5799ab49207b6591a6b824be0b6ebf30
https://doi.org/10.1109/led.2008.2010340
https://doi.org/10.1109/led.2008.2010340
Publikováno v:
IEEE Electron Device Letters. 30:901-903
We present an AlGaN/GaN high-electron mobility transistor (HEMT) with an integrated recessed protection diode on the drain side of the transistor channel. Results from our Schottky-drain HEMT demonstrate an excellent reverse blocking with minor trade
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26ce33257f03feef8f50848373f6f66e
https://doi.org/10.1109/led.2009.2026437
https://doi.org/10.1109/led.2009.2026437
Publikováno v:
IEEE Microwave and Wireless Components Letters. 18:605-607
This paper presents a study of the capability of gallium-nitride (GaN) high-electron mobility transistors (HEMTs) to achieve low noise and high linearity performance. A packaged GaN HEMT was measured in a 50 - Omega system at 2 GHz. Noise figures sli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49c2e14efb0ef9cd6458a435bd620079
https://doi.org/10.1109/lmwc.2008.2002458
https://doi.org/10.1109/lmwc.2008.2002458
Autor:
O. Kruger, G. Trankle, F. Schnieder, G. Schone, R. Lossy, A. Liero, T. Wernicke, Joachim Würfl
Publikováno v:
IEEE Electron Device Letters. 27:425-427
Vertical interconnect accesses (VIAs) were fabricated between the source electrode on the front and the ground on the backside of high-power microwave AlGaN/GaN high-electron mobility transistors (HEMTs) on /spl sim/400-/spl mu/m-thick silicon carbid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6719019ed5040f6a542a2230a59562f
https://doi.org/10.1109/led.2006.874212
https://doi.org/10.1109/led.2006.874212
Publikováno v:
Scopus-Elsevier
Doping by ion implantation, in addition to the introduction of dopants during material growth, is the only method available to obtain the required electronic activation in SiC and is also capable of providing area selective doping. Results presented
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1713a543232bc14e0d335617df89506a
https://doi.org/10.1016/s0921-5107(96)01968-x
https://doi.org/10.1016/s0921-5107(96)01968-x
Publikováno v:
IEEE Transactions on Electron Devices. 39:444-447
A new type of broad-beam ion optics has been developed. It avoids misalignment of the electrode grids and can be installed without any adjustment procedure. The compact ion optics is a two-electrode system that is aligned by the fabrication process.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d781948759cadeff2aad64a0f6f5dee1
https://doi.org/10.1109/16.121705
https://doi.org/10.1109/16.121705
Publikováno v:
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
Gallium nitride transistors for high power microwave application are often limited by power loss due to extended transistor finger size. A new design for the gate supply is presented which allows for higher power gain compared to conventional transis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95e357bcb8211f77c4fcc9b57ef9bb61
https://doi.org/10.1109/iedm.2005.1609413
https://doi.org/10.1109/iedm.2005.1609413
Publikováno v:
Scopus-Elsevier
Nitrogen was implanted into p-type β-SiC at implantation temperatures between 300 K and 1473 K. The implanted samples were characterized by Secondary Ion Mass Spectroscopy (SIMS) and electrically by resistivity and Hall measurements. The analysis wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c298772a73f2b78248e627eb5e7cd558
https://doi.org/10.1016/s0925-9635(97)00073-3
https://doi.org/10.1016/s0925-9635(97)00073-3
Publikováno v:
IEEE MTT-S, International Symposium on Microwave Theory and Techniques
IEEE MTT-S, International Symposium on Microwave Theory and Techniques, Jun 2003, Philadelphia, PA, United States. pp. 455-458, ⟨10.1109/MWSYM.2003.1210974⟩
Scopus-Elsevier
IEEE MTT-S, International Symposium on Microwave Theory and Techniques, Jun 2003, Philadelphia, PA, United States. pp. 455-458, ⟨10.1109/MWSYM.2003.1210974⟩
Scopus-Elsevier
AlGaN/GaN HEMTs are promising devices for very high power applications. These transistors present high breakdown voltages and have already shown their ability to operate at high temperature. But their power performances are limited because of the pre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d210f0d9f9fd19b0f028aa2e13128fc1
https://hal-unilim.archives-ouvertes.fr/hal-01070003
https://hal-unilim.archives-ouvertes.fr/hal-01070003
Publikováno v:
J. Electronic Materials 26 (1997) 123
Doping profiles and electrical properties are investigated on SiC samples doped with single energy implants from nitrogen. The profiles are analyzed using Pearson distributions for different implantation energies and temperatures. Implantations are p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bb9c519b44f85f38b6f95b9db6aab4b6
https://www.hzdr.de/publications/Publ-2329-1
https://www.hzdr.de/publications/Publ-2329-1