Direct atomic layer deposition of ultra-thin Al2O3 and HfO2 films on gold-supported monolayer MoS2

Autor: E. Schilirò, S.E. Panasci, A.M. Mio, G. Nicotra, S. Agnello, B. Pecz, G.Z. Radnoczi, I. Deretzis, A. La Magna, F. Roccaforte, R. Lo Nigro, F. Giannazzo

Publikováno v: Applied Surface Science. 630:157476

In this paper, the atomic layer deposition (ALD) of ultra-thin films (80 ALD cycles, corresponding to 3.6 nm $Al_{2}O_{3}$ and 3.1 nm $HfO_{2}$. Current mapping by C-AFM showed, for the same applied bias, a uniform insulating behavior of $Al_{2}O_{3}

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::526604796d6de53469259a95b6a42434
https://doi.org/10.1016/j.apsusc.2023.157476

Aluminum oxide nucleation in the early stages of atomic layer deposition on epitaxial graphene

Autor: R. Lo Nigro, Rositza Yakimova, S. E. Panasci, Filippo Giannazzo, Emanuela Schilirò, Simonpietro Agnello, Fabrizio Roccaforte, Franco Mario Gelardi

In this work, the nucleation and growth mechanism of aluminum oxide (Al2O3) in the early stages of the direct atomic layer deposition (ALD) on monolayer epitaxial graphene (EG) on silicon carbide (4H-SiC) has been investigated by atomic force microsc

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ad77784cf476a8c5049344fbbfafcd41
http://arxiv.org/abs/2007.14427

Electrical and structural properties of surfaces and interfaces in Ti/Al/Ni Ohmic contacts to p-type implanted 4H-SiC

Autor: Marilena Vivona, R. Lo Nigro, Corrado Bongiorno, Silvia Scalese, Giuseppe Greco, Fabrizio Roccaforte

Publikováno v: Applied surface science 420 (2017): 331–335. doi:10.1016/j.apsusc.2017.05.065
info:cnr-pdr/source/autori:Vivona, M.; Greco, G.; Bongiorno, C.; Lo Nigro, R.; Scalese, S.; Roccaforte, F./titolo:Electrical and structural properties of surfaces and interfaces in Ti%2FAl%2FNi Ohmic contacts to p-type implanted 4H-SiC/doi:10.1016%2Fj.apsusc.2017.05.065/rivista:Applied surface science/anno:2017/pagina_da:331/pagina_a:335/intervallo_pagine:331–335/volume:420

In this work, the electrical and structural properties of Ti/Al/Ni Ohmic contacts to p-type implanted silicon carbide (4H-SiC) were studied employing different techniques. With increasing the annealing temperature, an improvement of the electrical pr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e91a8eee11e709741eac59197ffded62
https://doi.org/10.1016/j.apsusc.2017.05.065

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Ti/Al-based contacts to p-type SiC and GaN for power device applications

Autor: F. Roccaforte 1, M. Vivona 1, G. Greco 1, R. Lo Nigro 1, F. Giannazzo 1, S. Di Franco 1, C. Bongiorno 1, F. Iucolano 2, A. Frazzetto 2, S. Rascuna 2, A. Patti 2, M. Saggio, 2

Publikováno v: Physica status solidi. A, Applications and materials science
214 (2017): 1600357-1–1600357-7. doi:10.1002/pssa.201600357
info:cnr-pdr/source/autori:F. Roccaforte 1, M. Vivona 1, G. Greco 1, R. Lo Nigro 1, F. Giannazzo 1, S. Di Franco 1, C. Bongiorno 1, F. Iucolano 2, A. Frazzetto 2, S. Rascuna 2, A. Patti 2, M. Saggio, 2/titolo:Ti%2FAl-based contacts to p-type SiC and GaN for power device applications/doi:10.1002%2Fpssa.201600357/rivista:Physica status solidi. A, Applications and materials science (Print)/anno:2017/pagina_da:1600357-1/pagina_a:1600357-7/intervallo_pagine:1600357-1–1600357-7/volume:214

Metal contacts (Schottky or Ohmic) to p-type wide band gap (WBG) semiconductors SiC and GaN are important for power devices technologies. This work reports on the properties of Ti/Al-based contacts to p-type 4H-SiC and p-type GaN, monitored using dif

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::46b0334f4e76e026f90902f731890d2b