Zobrazeno 1 - 10
of 47
pro vyhledávání: '"R. Lewandowska"'
Autor:
R. Lewandowska, J Liu
After being considered as an over complicated technique and so remaining as an academic technique for long, Raman spectroscopy is now developing rapidly just as other regular experimental techniques. In this article, the basics of Raman spectroscopy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2a29ae407bfaf1b81bb50cd9074563d
https://doi.org/10.1016/b978-0-12-803581-8.02593-5
https://doi.org/10.1016/b978-0-12-803581-8.02593-5
Akademický článek
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Autor:
Bernard Ferrand, Jessica Eid, Guy Rolland, R. Lewandowska, Michel Burdin, Jean Louis Santailler, Jean Camassel
Publikováno v:
Materials Science Forum. :29-32
We report the effect of changing the growth conditions in the case of bulk 3C-SiC crystals grown by the Travelling Zone Method when the seed is placed on the top graphite rod. First, we investigated the effect of changing the temperature gradient and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1fc8ff924568439e175dacc3e5f7f2ec
https://doi.org/10.4028/www.scientific.net/msf.556-557.29
https://doi.org/10.4028/www.scientific.net/msf.556-557.29
Publikováno v:
physica status solidi (a). 204:1008-1013
Micro-Raman spectroscopy has been used to investigate two different 3C-SiC crystals grown from the melt using the travelling-zone method. The melt was a C-rich silicon solution held at 1700 °C. Two different (relative) positions of the seed and feed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56e540d6dc6939da645ef612b0e672b3
https://doi.org/10.1002/pssa.200674134
https://doi.org/10.1002/pssa.200674134
Publikováno v:
physica status solidi c. 4:1513-1516
We report the results of combined investigations of as-grown stacking faults found in a-thick, undoped, 4H-SiC epitaxial layer grown by CVD. We have use successively, low temperature photoluminescence (LTPL), room temperature cathodo-luminescence (RT
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02c2f8af5908c2454ed1745a711263ee
https://doi.org/10.1002/pssc.200674133
https://doi.org/10.1002/pssc.200674133
Publikováno v:
Journal of Crystal Growth, 307, 2, pp. 298-301
Journal of Crystal Growth, 307, 298-301
Journal of Crystal Growth, 307, 298-301
Large areas of electrically active regions of in-homogeneities have been revealed by the electroless photo-etching (PEC) method in GaN layers grown by the hydride vapor phase epitaxy (HVPE) technique. Variations in the local etch rate have been corre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::340beb450f69a06a8220b01b0ceab8c8
https://doi.org/10.1016/j.jcrysgro.2007.07.019
https://doi.org/10.1016/j.jcrysgro.2007.07.019
Autor:
Jean Camassel, B. Ferrand, J. Eid, A. Passero, Carole Balloud, J. L. Santailler, R. Lewandowska, A. Basset
Publikováno v:
Superlattices and Microstructures. 40:201-204
Cubic-silicon carbide crystals have been grown from carbon-rich silicon solutions using the travelling-zone method. To improve the growth process, we investigated the effect of controlling more tightly some of the growth parameters. Using such improv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6281abf871599de4ae7375ff3592cf4
https://doi.org/10.1016/j.spmi.2006.06.009
https://doi.org/10.1016/j.spmi.2006.06.009
Publikováno v:
Materials Science in Semiconductor Processing. 9:175-179
HVPE-grown homo-epitaxial 2 mm thick GaN single crystals were examined using different techniques, including orthodox defect-selective etching in molten bases and electroless photo-etching (PEC method) in aqueous KOH solution, micro-Raman spectroscop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c0a41a109ef2f55a92636f01b363d08
https://doi.org/10.1016/j.mssp.2006.01.083
https://doi.org/10.1016/j.mssp.2006.01.083
Publikováno v:
Journal of Alloys and Compounds. 362:241-247
Rietveld refinements for copper indium selenides CuInSe2 and CuIn3Se5 and their mixture were performed using data collected at a Bragg–Brentano diffractometer. The values of lattice parameters, axial ratio and positional parameters are discussed an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37362d7e884e12a85ba93238856d8394
https://doi.org/10.1016/s0925-8388(03)00592-9
https://doi.org/10.1016/s0925-8388(03)00592-9
Publikováno v:
Crystal Research and Technology. 37:235-241
Local atomic structure of Cu 2 In 4 Se 7 and CuIn 3 Se 5 is studied using the EXAFS method. EXAFS at the K edges of Cu and Se has been measured and analysed. An analysis of the Cu K-edge absorption data was performed with phase shifts and amplitudes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb65857c1adbdba10286c97dca2f219b
https://doi.org/10.1002/1521-4079(200202)37:2/3<235::aid-crat235>3.0.co
https://doi.org/10.1002/1521-4079(200202)37:2/3<235::aid-crat235>3.0.co