Zobrazeno 1 - 10
of 39
pro vyhledávání: '"R. Leibenguth"'
Autor:
S.A. Feld, Dinesh Patel, R. Leibenguth, H. Temkin, J. W. Bae, Carmen S. Menoni, Carl W. Wilmsen, C.H. McMahon, P. Brusenbach
Publikováno v:
Journal of Physics and Chemistry of Solids. 56:663-667
Low threshold current operation of vertical cavity surface emitting lasers (VCSELs) depends on a close match between the reflectivity resonance and the gain peak. We have used differential pressure and temperature tuning of these two spectra to quant
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a75ebdf826b0ae719ebe1119df88194
https://doi.org/10.1016/0022-3697(94)00260-6
https://doi.org/10.1016/0022-3697(94)00260-6
Autor:
A. V. Krishnamoorthy, J. E. Ford, K. W. Goossen, J. A. Walker, A. L. Lentine, S. P. Hui, B. Tseng, L. M. F. Chirovsky, R. Leibenguth, D. Kossives, D. Dahringer, L. A. D’Asaro, F. E. Kiamilev, G. F. Aplin, R. G. Rozier, D. A. B. Miller
Publikováno v:
Applied optics. 35(23)
Owing to printing errors, [Appl. Opt. 35, 2439 (1996)] several figures were illegible. The figures are reprinted and briefly reviewed.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1d5c2c487f7917fc388590b1e4b2ff90
https://pubmed.ncbi.nlm.nih.gov/21102885
https://pubmed.ncbi.nlm.nih.gov/21102885
Autor:
Jorge J. Rocca, V. Morozov, S.A. Feld, Juan L. A. Chilla, O. Buccafusca, R. Leibenguth, Carl W. Wilmsen
Publikováno v:
Applied Physics Letters. 68:590-592
Summary form only given. With modulation bandwidth of 10-15 GHz, vertical-cavity surface-emitting lasers (VCSELs) have become a suitable choice for optical interconnects. However, the presence of higher order modes in the cavity can cause rapid varia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61281055e476d0d3b9d4418e3bc05036
https://doi.org/10.1063/1.116477
https://doi.org/10.1063/1.116477
Autor:
R. Leibenguth, Keith W. Goossen
Publikováno v:
Conference Proceedings. LEOS '97. 10th Annual Meeting IEEE Lasers and Electro-Optics Society 1997 Annual Meeting.
In conclusion, we have presented two-wavelength demultiplexing photodiodes utilizing multiple quantum well material so that for wavelengths as close as 15 nm there is less that -12 dB of crosstalk. We produced two devices, one that operates at 810 an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::095a52739c75decf07f178818277658a
https://doi.org/10.1109/leos.1997.630585
https://doi.org/10.1109/leos.1997.630585
Autor:
R. Leibenguth, Keith W. Goossen
Publikováno v:
Conference Proceedings. LEOS '97. 10th Annual Meeting IEEE Lasers and Electro-Optics Society 1997 Annual Meeting.
Summary form only given. We present data designed to show material defect levels pertinent to p-i-n MQW modulators. We do this by forming extremely-large modulators with 5x5 mm active areas. We then measure the reverse leakage current. Our wafer was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77dac0197c5b03649b0d48c690fc682c
https://doi.org/10.1109/leos.1997.630626
https://doi.org/10.1109/leos.1997.630626
Autor:
K.W. Goossen, A.L. Lentine, J.A. Walker, L.A. D'Asaro, S.P. Hui, B. Tseng, R. Leibenguth, D. Kossives, D. Dahringer, L.M.F. Chirovsky, D.A.B. Miller
Publikováno v:
Optical Computing.
This work passes an important milestone in the history of optoelectronic and perhaps even electronic technology in general, the demonstration of a VLSI-scalable electronic technology integrated with a high-speed, dense optoelectronic technology. With
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a202f0ac02128b2d8a1f54625a2dddac
https://doi.org/10.1364/optcomp.1995.otuc1
https://doi.org/10.1364/optcomp.1995.otuc1
Autor:
A. V. Krishnamoorthy, J. E. Ford, K. W. Goossen, J. A. Walker, A. L. Lentine, L. A. D’Asaro, S. P. Hui, B. Tseng, R. Leibenguth, D. Kossives, D. Dahringer, L. M. F. Chirovsky, F. E. Kiamilev, G. F. Aplin, R. G. Rozier, D. A. B. Miller
Publikováno v:
Optical Computing.
The tremendous progress in high performance Very-Large Scale Integrated circuit (VLSI) technology has made possible the incorporation of several million transistors onto a single silicon chip with on-chip clock rates of 200 MegaHertz (MHz). By the en
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c29765430a410021674de5181d346c09
https://doi.org/10.1364/optcomp.1995.pd2
https://doi.org/10.1364/optcomp.1995.pd2
Publikováno v:
Applied Physics Letters. 52:1089-1091
Double heterostructure bipolar transistors with the base region consisting of a p‐Ge0.5Si0.5 strained‐layer superlattice have been grown by molecular beam epitaxy. At a wavelength of 1.3 μm, optical gain as high as 52 has been achieved in two‐
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd48175c112ba96abdcd3295d5e00773
https://doi.org/10.1063/1.99220
https://doi.org/10.1063/1.99220
Conference
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Akademický článek
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