Zobrazeno 1 - 10
of 28
pro vyhledávání: '"R. Lamendola"'
Autor:
L. Cocchi, C. Codignola, Marco Garatti, S. Giaccari, Elio Treppiedi, Valentina Sega, R. Lamendola, Edoardo Rosso, Alberto Manzoni, Giuseppe Zimmitti
Publikováno v:
HPB. 22:S239-S240
Autor:
Marco Garatti, Elio Treppiedi, Alberto Manzoni, Giuseppe Zimmitti, Edoardo Rosso, R. Lamendola
Publikováno v:
HPB. 22:S401
Publikováno v:
Journal of The Electrochemical Society. 143:701-707
The dry etching of cobalt silicide has been investigated to evaluate the most important process variables. It has been demonstrated that among the commonly used etchants, only chlorine atoms are suitable to react appreciably with CoSi 2 . Strong ion
Publikováno v:
Pure and Applied Chemistry. 66:1185-1193
XPS surface analysis, particularly with an in situ approach, coupled with plasma diagnostic techniques, gives a fairly good insight of plasma-surface interactions. Specific examples to be discussed include etching of Al, Ti, TIN, W, and deposition of
Autor:
M. L. Curri, Angela Traini, Paolo Bruno, P. Favia, Maurizio Caselli, Annarosa Mangone, R. Lamendola, Caterina Laganara
Publikováno v:
Fresenius' Journal of Analytical Chemistry. 350:168-177
Medieval ceramic sherds have been studied by inductively coupled plasma (ICP) emission spectroscopy and X-ray photoelectron spectroscopy (XPS) in order to acquire knowledge about technological achievements in pottery production in Apulia during the M
Publikováno v:
ChemInform. 25
XPS surface analysis, particularly with an in situ approach, coupled with plasma diagnostic techniques, gives a fairly good insight of plasma-surface interactions. Specific examples to be discussed include etching of Al, Ti, TIN, W, and deposition of
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Marco Alvisi, Teresa Ligonzo, Leander Tapfer, Annalisa Convertino, R. Lamendola, Antonio Valentini, R. Cingolani
Publikováno v:
Scopus-Elsevier
Synthesis of silicon carbide (SiC) films has been obtained by means of ion beam sputtering. The films have been grown by co-sputtering Si and C targets by means of two Ar-ion beams at substrate temperatures ranging between 30 and 700°C. Chemical, st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::72cf86a712d77c5fb2106acb4cabd5c2
http://www.scopus.com/inward/record.url?eid=2-s2.0-0032307127&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0032307127&partnerID=MN8TOARS
Autor:
V. Roohk, M. Sangh, S. M. Hufstedler, R. Schaefer, R. LaMendola, Kevin K. Tremper, June Zaccari, R. Asrani
Publikováno v:
Anesthesiology. 61:A163-A163
Conference
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.