Zobrazeno 1 - 10
of 161
pro vyhledávání: '"R. L. van Meirhaeghe"'
Autor:
Christophe Detavernier, R. L. Van Meirhaeghe, K. De Keyser, Delphine Longrie, Davy Deduytsche, Jan Musschoot, S. Van den Berghe, Jan D'Haen, Johan Haemers, Qi Xie
Publikováno v:
Microelectronic Engineering. 87:1879-1883
Ruthenium films were grown by plasma enhanced atomic layer deposition (ALD) on Si(100) and ALD TiN. X-ray diffraction (XRD) showed that the as-deposited films on Si(100) were polycrystalline, on TiN they were (002) oriented. After annealing at 800^oC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3369f3c9a768ea9e3a3143b6731cc54f
https://doi.org/10.1016/j.mee.2009.11.020
https://doi.org/10.1016/j.mee.2009.11.020
Autor:
Christian Lavoie, Christophe Detavernier, R. L. Van Meirhaeghe, K. De Keyser, André Vantomme, Jelle Demeulemeester, C. Van Bockstael, Jean Jordan-Sweet
Publikováno v:
Microelectronic Engineering. 87:282-285
We investigate Co silicide phase formation when extra Si is added within an as deposited 50nm Co film. The addition of Si is investigated for both the Co/SiO"2 and Co/Si(100) system. A series of 10 Co-Si mixed films with a Si content varying from 21
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efaa025f54a5cb80d4ae3fa0c3ee5ca4
https://doi.org/10.1016/j.mee.2009.07.011
https://doi.org/10.1016/j.mee.2009.07.011
Autor:
André Vantomme, Christian Lavoie, R. L. Van Meirhaeghe, Werner Knaepen, Christophe Detavernier, Davy Deduytsche, Jean Jordan-Sweet, Jelle Demeulemeester
Publikováno v:
Microelectronic Engineering. 87:258-262
The solid state reaction between a thin (30nm) Ir film and different Si substrates (p-type Si(100), n- and p-type Si(111), silicon on insulator (SOI) and polycrystalline Si) was studied using a combination of in situ X-ray diffraction (XRD), in situ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a6320a7be41d6103933ee5d2464cad3
https://doi.org/10.1016/j.mee.2009.06.002
https://doi.org/10.1016/j.mee.2009.06.002
Autor:
Christian Lavoie, Jean Jordan-Sweet, André Vantomme, Christophe Detavernier, Werner Knaepen, R. L. Van Meirhaeghe, Jelle Demeulemeester
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 28:20-26
The phase formation in the ternary Ni/Yb/Si system was studied for Ni–Yb alloy and interlayer structures on Si(100) substrates using in situ x-ray diffraction measurements. Yb was treated as an alloying element in the Ni–Si system with Yb concent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32184aa5efadafbadd08841471e00b9e
https://doi.org/10.1116/1.3259875
https://doi.org/10.1116/1.3259875
Publikováno v:
Applied Physics A. 98:357-365
The effects of deposition conditions on the physical and electrical performance of the n-ZnO/p-Si heterojunction were systematically investigated. ZnO films were deposited on the Si and glass substrates using direct current (DC) magnetron sputtering
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd6d315071f69449135715bb4845c16c
https://doi.org/10.1007/s00339-009-5386-9
https://doi.org/10.1007/s00339-009-5386-9
Publikováno v:
Journal of Materials Science: Materials in Electronics. 21:88-95
The effects of the post-annealing treatment on the properties of the ZnO thin films deposited by ion beam sputtering have been investigated. By using in situ X-ray diffraction technique, an overview of the crystallization behavior of the ZnO film dur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0cb4c2d214fa94c8c368c48d33321c40
https://doi.org/10.1007/s10854-009-9874-7
https://doi.org/10.1007/s10854-009-9874-7
Autor:
R. L. Van Meirhaeghe, Qi Xie, Jan Musschoot, Davy Deduytsche, S. Van den Berghe, Christophe Detavernier
Publikováno v:
Microelectronic Engineering. 86:72-77
TiN was grown by atomic layer deposition (ALD) from tetrakis(dimethylamino)titanium (TDMAT). Both thermal and plasma enhanced processes were studied, with N"2 and NH"3 as reactive gases. Using an optimized thermal ammonia based process, a growth rate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2744ee09b8014d17bec5a8114c2b6c3d
https://doi.org/10.1016/j.mee.2008.09.036
https://doi.org/10.1016/j.mee.2008.09.036
Autor:
R. L. Van Meirhaeghe, Jean Jordan-Sweet, Christian Lavoie, Christophe Detavernier, Davy Deduytsche
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 26:1971-1977
The formation and degradation of NiSi in the presence of Co and Fe alloying elements have been investigated. Alloyed Ni layers were characterized with in situ techniques to determine the stability of the NiSi phase on single crystalline and on polycr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::403184ab1bdcb8338da993719d841cfa
https://doi.org/10.1116/1.3010719
https://doi.org/10.1116/1.3010719
Publikováno v:
Thin Solid Films. 516:7851-7856
It is important to investigate the factors that influence the metal–semiconductor interfaces. Some of these factors are the effects of the semiconductor surface and barrier metal. Therefore, in this work we have investigated the influences of hydro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::068aa9ef553e4aeb364f0e44a521b395
https://doi.org/10.1016/j.tsf.2008.05.015
https://doi.org/10.1016/j.tsf.2008.05.015
Autor:
Yu-Long Jiang, Xin-Ping Qu, Bing-Zong Li, Guo-Ping Ru, R. L. Van Meirhaeghe, Wei Huang, Christophe Detavernier
Publikováno v:
Microelectronic Engineering. 85:131-135
Yttrium silicide formation and its contact properties on Si(100) have been studied in this paper. By evaporating a yttrium metal layer onto Si(100) wafer in conventional vacuum condition and rapid thermal annealing, we found that YSi"2"-"x begins to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3cd1f513c6ae75140690b5c0eb9d96de
https://doi.org/10.1016/j.mee.2007.04.144
https://doi.org/10.1016/j.mee.2007.04.144