Zobrazeno 1 - 10
of 52
pro vyhledávání: '"R. L. de Orio"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 61-67 (2021)
We propose a magnetic field-free spin-orbit torque switching scheme based on two orthogonal current pulses, for which deterministic switching is demonstrated via numerical simulations. The first current pulse selects the cell, while the second curren
Externí odkaz:
https://doaj.org/article/cd397d00adf342548ec6c49d84add689
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 1249-1256 (2020)
In spin-transfer torque magnetoresistive random access memory, the magnetization dynamics of a free layer is usually assumed to be determined by the torque created via a position-independent current density. In circuits, however, it is the voltage, n
Externí odkaz:
https://doaj.org/article/829fbd4505074f10a7e7a2a02bb4263b
Publikováno v:
2022 IEEE International Interconnect Technology Conference (IITC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0464a63d22e66783e3336328ef5f608a
https://doi.org/10.1109/iitc52079.2022.9881313
https://doi.org/10.1109/iitc52079.2022.9881313
Autor:
M. Bendra, S. Fiorentini, J. Ender, R. L. de Orio, T. Hadamek, W. J. Loch, N. P. Jorstad, S. Selberherr, W. Goes, V. Sverdlov
Publikováno v:
2022 45th Jubilee International Convention on Information, Communication and Electronic Technology (MIPRO).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8649d34ed54bdab44d761164e17e7d8a
https://doi.org/10.23919/mipro55190.2022.9803736
https://doi.org/10.23919/mipro55190.2022.9803736
Publikováno v:
Journal of Integrated Circuits and Systems. 15:1-5
This paper demonstrates a finite element model to investigate the temperature change of the interconnects of an integrated circuit due to the power dissipation of the transistors in the substrate. The temperature of the local interconnect is more sig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3c39dd0cb5c6847d3d66a09d8a814fe
https://doi.org/10.29292/jics.v15i2.168
https://doi.org/10.29292/jics.v15i2.168
Autor:
Viktor Sverdlov, M. Bendra, Siegfried Selberherr, R. L. de Orio, T. Hadamek, Wolfgang Goes, Johannes Ender, Simone Fiorentini
Publikováno v:
MIPRO
Spin-transfer torque magnetoresistive random access memory (STT-MRAM) is among the most promising candidates for emerging memories. Thus, reliable simulation tools are mandatory to provide an important aid for understanding and improving the design o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2e06ab9c111b48227ad96a271752af8
https://doi.org/10.23919/mipro52101.2021.9597194
https://doi.org/10.23919/mipro52101.2021.9597194
Autor:
Johannes Ender, Siegfried Selberherr, R. L. de Orio, Simone Fiorentini, Wolfgang Goes, Viktor Sverdlov
Publikováno v:
2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
The magnetization dynamics of a free layer in spin-transfer torque MRAM is usually determined by the torque created by a position-independent current density. In circuits, the voltage, not current density, is fixed during switching. Therefore, the ap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2ed7f59383050721337c632257ab6cc
https://doi.org/10.1109/edtm47692.2020.9117985
https://doi.org/10.1109/edtm47692.2020.9117985
Autor:
Wolfgang Goes, Simone Fiorentini, Siegfried Selberherr, R. L. de Orio, Johannes Ender, Viktor Sverdlov
Publikováno v:
Solid-State Electronics. 186:108103
A drift-diffusion approach to coupled spin and charge transport has been commonly applied to determine the spin-transfer torque acting on the magnetization in metallic valves. This approach, however, is not suitable to describe the predominant tunnel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3dfcc71ac03c3b06377e6c8103bf1d19
https://doi.org/10.1016/j.sse.2021.108103
https://doi.org/10.1016/j.sse.2021.108103
Autor:
Siegfried Selberherr, R. L. de Orio, Wolfgang Goes, Johannes Ender, Viktor Sverdlov, Simone Fiorentini
Publikováno v:
Microelectronics Reliability. 126:114231
Finding and optimizing robust schemes for field-free switching remains a challenging problem in spin-orbit torque magnetoresistive random access memories. In this work reinforcement learning is employed for the optimization of switching schemes for s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b26682a758bcb565a7b9e33f7e983872
https://doi.org/10.1016/j.microrel.2021.114231
https://doi.org/10.1016/j.microrel.2021.114231
Autor:
R. L. de Orio, Simone Fiorentini, Johannes Ender, Viktor Sverdlov, Siegfried Selberherr, Wolfgang Goes
Publikováno v:
Solid-State Electronics. 185:108075
We demonstrate by means of numerical simulations the switching of a perpendicularly magnetized free layer by spin–orbit torques based on a two-pulse switching scheme with improved writing power efficiency. In this scheme, the first pulse selects th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a109168eb382f26ff6ae223e2d393fdc
https://doi.org/10.1016/j.sse.2021.108075
https://doi.org/10.1016/j.sse.2021.108075