Zobrazeno 1 - 10
of 31
pro vyhledávání: '"R. L. Strong"'
Autor:
Michael A. Kinch, R. L. Strong
Publikováno v:
Journal of Electronic Materials. 43:2824-2830
HgCdTe infrared focal plane array (FPA) operability is usually limited not by dark current defects but by noise defects. Pixels with high 1/f noise should produce a tail in the root-mean-square (RMS) noise distribution. Integration time normalization
Publikováno v:
SPIE Proceedings.
Reducing an array’s pixel pitch reduces the size and weight of the focal plane array (FPA) and its associated dewar, cooler and optics. Higher operating temperatures reduce cool-down time and cooler power, enabling reduced cooler size and weight. H
Publikováno v:
Journal of Electronic Materials. 24:1293-1297
Piezoelectric effect in long-wavelength infrared (LWIR) HgCdTe has been studied using metal-insulator-semiconductor (MIS) and p-n homojunction devices. A cantilever beam technique was used to measure the shift in flatband voltage in the MIS devices a
Autor:
Chang-Feng Wan, M. J. Ohlson, R. D. Burford, C. A. Schaake, D. Chandra, H. F. Schaake, R. L. Strong, Michael A. Kinch, J. Jacques, P. K. Liao
Publikováno v:
SPIE Proceedings.
The High Operating Temperature Auger suppressed infrared detector concept is being pursued using the high density vertically integrated photodiode (HDVIP ® ) architecture and an n + -p device structure. Dark current densities as low as 2.5 mA/cm 2 n
Autor:
Patricia B. Smith, R. L. Strong
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 8:1544-1548
The most common techniques used for the determination of thin film thickness are profilometry, spectrophotometry, and ellipsometry. Spectrophotometers require the refractive index of the film (generally assumed to be transparent) as an input paramete
Autor:
M. F. S. Tang, R. L. Strong, L. K. Magel, M. W. Goodwin, D. A. Stevenson, J. H. Tregilgas, S. B. Lee
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 8:1098-1102
We report on the characterization of mercury cadmium telluride (Hg1−xCdxTe) film grown by the isothermal vapor phase epitaxial method (ISOVPE) and on the surface conversion of bulk Hg1−xCdxTe to larger bandgap material. The crystal perfection is
Publikováno v:
SPIE Proceedings.
In situ monitoring provides numerous advantages in the fabrication of HgCdTe-based infrared devices. Two in situ monitoring techniques are currently being investigated in our laboratory: optical emission spectroscopy (OES) and ellipsometry. OES is id
Autor:
C. R. Helms, C. M. Stahle, J. B. Pallix, Christopher H. Becker, R. L. Strong, A. Simmons, H. F. Schaake
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 8:3373-3373
Autor:
James L Erskine, R. L. Strong
Publikováno v:
Physical Review B. 31:6305-6319
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 5:3207-3210
Anodic sulfide films were grown on HgCdTe and studied by Auger electron spectroscopy, surface analysis by laser ionization, Rutherford backscattering spectroscopy, Raman and photoluminescence spectroscopy, and high‐resolution transmission electron