Zobrazeno 1 - 6
of 6
pro vyhledávání: '"R. L. Spreitzer"'
Autor:
RK Chiou, Jonathan K. Doylend, Harinadh Potluri, Ranju Venables, Christopher Seibert, John Heck, Jian Chen, Mohammad Montazeri, B. Xie, A. Awujoola, Yuliya Akulova, S. Gupta, Andrew Alduino, Nelson N. Tang, Richard Jones, Syed S. Islam, Summer R. Hollingsworth, Alexander Krichevsky, Avsar Dahal, Daniel Zhu, S. McCargar, David Hui, Hari Mahalingam, R. L. Spreitzer, Frish Harel, K. M. Brown, Siamak Amiralizadeh, S. Garag, Meer Sakib, Ling Liao, R. S. Appleton, Susheel G. Jadhav, Guneet Kaur, Kimchau N. Nguyen, A. Vardapetyan, Min Cen, Vishnu Kulkarni, Zhi Li, L. Kamyab, Thomas Liljeberg, Saeed Fathololoumi, Reece A. Defrees
Publikováno v:
Journal of Lightwave Technology. 39:1155-1161
We describe the performance of high bandwidth-density silicon photonic based integrated circuits (SiPh ICs) that enable the first fully functional photonic engine (PE) module co-packaged with an Ethernet switch. We demonstrate the 1.6 Tbps SiPh trans
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49887e58bdf260711bb918f633c2e138
https://doi.org/10.1109/jlt.2020.3039218
https://doi.org/10.1109/jlt.2020.3039218
Autor:
S. A. Rafalski, Mansour Moinpour, Farhad Moghadam, R. L. Spreitzer, S. W. Russell, Terry Alford, J. Li
Publikováno v:
Thin Solid Films. 262:154-167
Ti and Cr as both interposed layers and alloying components were found to enhance copper adhesion to dielectrics. Films deposited on SiO2, phosphosilicate glass (PSG) and boronphosphosilicate glass (BPSG) were annealed in 95%Ar-5%H2 over the temperat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0486d59634fcaaafd995bc15e13f2986
https://doi.org/10.1016/0040-6090(94)05812-1
https://doi.org/10.1016/0040-6090(94)05812-1
Autor:
Farhad Moghadam, S. A. Rafalski, Mansour Moinpour, S. W. Russell, J. Li, Terry Alford, R. L. Spreitzer, James W. Mayer
Publikováno v:
MRS Proceedings. 337
Copper films generally exhibit poor adhesion on dielectrics. It has been shown that the addition of refractory metals promotes adhesion via an interfacial reaction or better wetting to the dielectric. We investigate the adhesion of Cu-refractory meta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a95e32df7775831b79d660753a1a7c4
https://doi.org/10.1557/proc-337-613
https://doi.org/10.1557/proc-337-613
Autor:
S. A. Rafalski, Daniel Adams, Jian Li, Terry Alford, S. W. Russell, James W. Mayer, R. L. Spreitzer, Z. Atzmon
Publikováno v:
MRS Proceedings. 337
We studied interfacial phase formation between copper and copper-alloy films on SiO2 in order to understand how to improve adhesion. CuCr and CuTi alloy and bilayer films on SiO2 were annealed from 400-600°C for 30 min in an N2 + H2 (5%) ambient. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1675574fd18c7a86c25bb897bdd48ea
https://doi.org/10.1557/proc-337-631
https://doi.org/10.1557/proc-337-631
Autor:
Terry Alford, Robert Culbertson, A. E. Bair, Daniel Adams, S. W. Russell, M. J. Rack, R. L. Spreitzer
Publikováno v:
MRS Proceedings. 337
We investigate the nitridation of chromium films in an NH3 ambient at 500°C. Rutherford backscattering spectrometry using 2.0 MeV He2+ was utilized to determine the compositions of thick reacted layers and to provide calibration for the other techni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6a5aceaec39ac5caf0e6e8bcdc56d7e
https://doi.org/10.1557/proc-337-619
https://doi.org/10.1557/proc-337-619
Publikováno v:
MRS Proceedings. 337
Cu(Ti 27 at. %) and Cu(Cr 26 at. %) codeposited on silicon dioxide substrates were annealed in a flowing NH3 ambient at 400 - 600°C for 30 min. The Ti segregates to both the surface to form a TiN(O) layer and to the alloy/SiO2 interface to form a Ti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fd26e84d6bb03a58290be9a5eb572a1
https://doi.org/10.1557/proc-337-231
https://doi.org/10.1557/proc-337-231