Zobrazeno 1 - 3
of 3
pro vyhledávání: '"R. L. Raybold"'
Publikováno v:
Journal of Applied Physics. 34:380-383
A new method of studying the surface states of silicon is described. Essentially it involves applying porous graphite contacts to p‐type silicon and exposing the samples to various inversion‐layer producing gaseous ambients. A voltage pulse is ap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0116cc73e5bbe0201dfee87066909f0
https://doi.org/10.1063/1.1702616
https://doi.org/10.1063/1.1702616
Autor:
G. G. Harman, R. L. Raybold
Publikováno v:
Physical Review. 104:1498-1499
A brief presentation of data is given for electroluminescent measurements made on several ZnS crystals over a frequency range of 1 cps to 370 Mc/sec. Electroluminescent relaxation becomes apparent in the order of ${10}^{5}$-${10}^{6}$ cps. A simple e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f195e9590c869ace652e04476fe4f810
https://doi.org/10.1103/physrev.104.1498
https://doi.org/10.1103/physrev.104.1498
Autor:
R. L. Raybold, G. G. Harman
Publikováno v:
Journal of Applied Physics. 32:1168-1169
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bed38257cfcbad20f49763444a7fb7c8
https://doi.org/10.1063/1.1736180
https://doi.org/10.1063/1.1736180