Zobrazeno 1 - 10
of 36
pro vyhledávání: '"R. L. Pfeffer"'
Autor:
R. Ramesh, Sanjeev Aggarwal, S Sambasivan, B. Nielsen, A. R. Moodenbaugh, T. Friessnegg, R. L. Pfeffer, Daniel A. Fischer
Publikováno v:
Physical Review B. 61:5666-5671
Oxygen K near-edge x-ray-absorption fine-structure (NEXAFS) of polycrystalline and film ${\mathrm{La}}_{1\ensuremath{-}x}{\mathrm{Sr}}_{x}{\mathrm{CoO}}_{3\ensuremath{-}\ensuremath{\delta}}$ at room temperature was studied using fluorescence yield te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72ab43c6b38a88d887b263f9ab3990d1
https://doi.org/10.1103/physrevb.61.5666
https://doi.org/10.1103/physrevb.61.5666
Autor:
Cole W. Litton, J. R. Flemish, R. L. Pfeffer, R. L. Jones, C. E. Stutz, R. E. Sherriff, T. P. Monahan, R. T. Lareau, Kenneth A. Jones, David C. Look
Publikováno v:
Journal of Crystal Growth. 167:406-414
δ-doped PHEMT structures commercially grown by OMVPE and MBE on 3 inch wafers were examined using contactless resistance, magneto-Hall, PR, PL, DXRD, RBS, SIMS, and electrochemical capacitance-voltage measurements, and 0.1 μm gate length devices we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9bd8a6cde44f0d211dd706b1dd698a25
https://doi.org/10.1016/0022-0248(96)00340-5
https://doi.org/10.1016/0022-0248(96)00340-5
Autor:
Stephen J. Pearton, C. Yuan, Melanie W. Cole, Richard A. Stall, Fan Ren, W. Y. Han, R. L. Pfeffer, Yicheng Lu, Y. Li, D. W. Eckart, T. Monahan
Publikováno v:
Journal of Applied Physics. 80:278-281
W was found to produce low specific contact resistance (ρc∼8.0×10−5 Ω cm2) ohmic contacts to n+‐GaN (n=1.5×1019 cm−3) with limited reaction between the metal and semiconductor up to 1000 °C. The formation of the β–W2N and W–N interf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::786d40d6e41540ac618181287a5d6c33
https://doi.org/10.1063/1.362816
https://doi.org/10.1063/1.362816
Autor:
R. T. Lareau, Kenneth A. Jones, J. R. Flemish, R. L. Jones, C. E. Stutz, David C. Look, R. L. Pfeffer, T. Monahan, Cole W. Litton, R. E. Sherriff
Publikováno v:
Journal of Electronic Materials. 24:1641-1648
Symmetric δ-doped InGaP and AlGaAs PHEMT structures have been grown by organometallic vapor phase epitaxy with properties that approach those of MBE grown AlGaAs structures. The 300 and 77K carrier concentrations for the InGaP PHEMT were 2.72 and 2.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::baabd933e8bd24a123c11bc255e30862
https://doi.org/10.1007/bf02676825
https://doi.org/10.1007/bf02676825
Publikováno v:
Journal of The Electrochemical Society. 142:1640-1643
Paraelectric lead lanthanum titanate (PLT) thin films have been prepared by a reactive dc magnetron sputtering system using a multicomponent metal target. The surface area control of each element on the target markedly facilitates the fabrication of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::979a4ab113eadaa5917d72c9fadf5c3c
https://doi.org/10.1149/1.2048629
https://doi.org/10.1149/1.2048629
Publikováno v:
Physica Status Solidi (a). 140:283-293
Experimental studies of the formation and electrical characterization of TiSi2/n + /p-Si shallow junctions are presented. The formation of shallow n + p junction, by ion implantation of As + through Ti films evaporated on p-Si substrates followed by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a820661ae5af21a63ddea6277dc41612
https://doi.org/10.1002/pssa.2211400128
https://doi.org/10.1002/pssa.2211400128
Autor:
R. L. Pfeffer, J. R. Flemish
Publikováno v:
Journal of Applied Physics. 74:3277-3281
The material and electrical properties of SiNx:H films deposited using a 2% SiH4/N2 mixture with additional N2 in an electron cyclotron resonance reactor have been evaluated. Deposition rate, refractive index, and stoichiometry have been determined u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2dfbeb46fd0b27ec4fde0a9f8c5a1e1
https://doi.org/10.1063/1.355318
https://doi.org/10.1063/1.355318
Publikováno v:
ChemInform. 24
This study investigates the use of diethylsilane as a single precursor to synthesize by low pressure chemical vapor deposition of amorphous SiC films. At 700 C, the deposition rate was observed to vary linearly with flow rate and pressure while the s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0e466119fc661e5aedc793747471c03
https://doi.org/10.1002/chin.199328025
https://doi.org/10.1002/chin.199328025
Publikováno v:
Applied Surface Science. :855-860
Layers of GaAs and Ca0.5Sr0.5F2 are grown by molecular beam epitaxy. The morphology, orientation, composition and crystallinity of the layers are analyzed as a function of growth temperature and surface treatment. The fluoride layers show a high degr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::374df82a40410127f4996fef7532a67e
https://doi.org/10.1016/0169-4332(92)90350-7
https://doi.org/10.1016/0169-4332(92)90350-7
Publikováno v:
Applied Physics Letters. 66:830-832
Superlattice heterostructures consisting of alternating single crystalline ferrimagnetic yttrium–iron–garnet (YIG) and bismuth–iron–garnet (BIG) thin film layers on gadolinium–gallium–garnet substrates show an increased saturation magneti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcd341a7c6216b9dfe8140b30d3eec5c
https://doi.org/10.1063/1.113436
https://doi.org/10.1063/1.113436