Zobrazeno 1 - 10
of 193
pro vyhledávání: '"R. L. Henry"'
Publikováno v:
European Journal of Entomology, Vol 101, Iss 2, Pp 337-340 (2004)
Some behavioural aspects of the reproductive biology of Megaselia andrenae Disney, a kleptoparasite of the communal bee Andrena agilissima (Scopoli), were investigated at the nesting site of its host at Isola d'Elba (Italy). The scuttle fly mates mor
Externí odkaz:
https://doaj.org/article/c6bbfcb7d6304e248e6993090193a65b
Publikováno v:
European Journal of Entomology, Vol 100, Iss 4, Pp 627-630 (2003)
In the years 1998-2000, parasitization of the pupae of various ladybird species by scuttle flies of the genus Phalacrotophora was studied in central Poland. Altogether, 12 ladybird species were found to be parasitized by these flies, and one of them,
Externí odkaz:
https://doaj.org/article/41149d94860846819a98fef6aed10e39
Autor:
R. L. Henry DISNEY, Shoko SAKAI
Publikováno v:
European Journal of Entomology, Vol 98, Iss 3, Pp 367-373 (2001)
Megaselia metropolitanoensis Disney, sp. n., M. sakaiae Disney, sp. n. and Puliciphora pygmaea (Borgmeier, 1960) comb. n. are reported developing in the flowers of Aristolochia inflata H. B. K. and A. maxima Jacq. in Panama. The new species are descr
Externí odkaz:
https://doaj.org/article/1ea7a150950748cf84a2a0b4bc71b73d
Publikováno v:
Paediatrica Indonesiana, Vol 48, Iss 2, Pp 64-70 (2008)
Background Measurement of exhaled nitric oxide (eNO) is a non- invasive and easy method to monitor airway inflammation. Objectives To compare the levels of eNO during and after an exacerbation of asthma, to evaluate the effect of glucocor- ticosteroi
Externí odkaz:
https://doaj.org/article/3eb052a9be4e47eaa12ebb4ce94c0b94
Publikováno v:
Microscopy of Semiconducting Materials 2003 ISBN: 9781351074636
Microscopy of Semiconducting Materials 2003
Microscopy of Semiconducting Materials 2003
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43869998a3856170f5651b5d8f64d8f2
https://doi.org/10.1201/9781351074636-74
https://doi.org/10.1201/9781351074636-74
Autor:
Michael A. Mastro, R. L. Henry, Yves Ngu, D Sander, Ronald T. Holm, Marty Peckerar, Charles R. Eddy, A Tuchman, Jennifer K. Hite
Publikováno v:
IEEE Transactions on Electron Devices. 57:1224-1229
An approach to fabricate a set of simultaneously operating dual-UV-wavelength detectors is described. The fabrication flow relies on the confined-epitaxy growth method. The confined epitaxial AlxGa1-xN-layer stacking approach is used to establish sim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d57f200d459e7c5922ac9557915e498
https://doi.org/10.1109/ted.2010.2045706
https://doi.org/10.1109/ted.2010.2045706
Publikováno v:
Advanced Materials. 20:115-118
A GaN resonant cavity light emitting diode was built on a GaN-AlN distributed Bragg reflector grown on a silicon substrate. The electroluminescence output increased by 2.5 times for a GaN diode coupled to a properly designed resonant cavity. Theoreti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c433096fd97be997b7dcf86ae995fc18
https://doi.org/10.1002/adma.200701683
https://doi.org/10.1002/adma.200701683
Autor:
Siddarth Sundaresan, John A. Schreifels, Jaime A. Freitas, Ronald T. Holm, Charles R. Eddy, Michael A. Mastro, R. D. Vispute, R. L. Henry, Madhu Murthy, Elba Gomar-Nadal, Mulpuri V. Rao, Yong-Lai Tian
Publikováno v:
Semiconductor Science and Technology. 22:1151-1156
Different protective caps (AlN, MgO, graphite) are investigated for their feasibility for protecting GaN surfaces during ultra-high-temperature (>1300 °C) microwave annealing. Compared to other capping materials, pulsed-laser-deposited AlN is found
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dfc69de467457ee0578bc3eb70226af0
https://doi.org/10.1088/0268-1242/22/10/012
https://doi.org/10.1088/0268-1242/22/10/012
Autor:
J. A. Powell, Michael A. Mastro, Philip G. Neudeck, Mark E. Twigg, R. L. Henry, Thomas J. Zega, Andrew J. Trunek, Nabil Bassim, Ronald T. Holm, James C. Culbertson, C. R. Eddy
Publikováno v:
Journal of Crystal Growth. 304:103-107
Using transmission electron microscopy, we have analyzed dislocations in AlN nucleation layers and GaN films deposited by metalorganic vapor phase epitaxy on the (0 0 0 1) surface of epitaxially grown 4H-SiC mesas with and without steps. For 4H-SiC s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b5bbd5d00d12de45c15041c602882c0
https://doi.org/10.1016/j.jcrysgro.2007.02.007
https://doi.org/10.1016/j.jcrysgro.2007.02.007
Autor:
C. R. Eddy, Jihyun Kim, Michael A. Mastro, Kendrick X. Liu, Jaime A. Freitas, Joshua D. Caldwell, Orest J. Glembocki, R. L. Henry, Ronald T. Holm
Publikováno v:
Applied Surface Science. 253:6157-6161
A novel rare-earth chloride seed was employed as a catalyst for growth of GaN nano- and micro-crystals on c-, a- and r-plane sapphire. The ErCl3 seed on the substrate surface enhanced the growth rate and density of the GaN crystals. Distinctive green
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1af4d44d47f37219ff881fa516088326
https://doi.org/10.1016/j.apsusc.2007.01.073
https://doi.org/10.1016/j.apsusc.2007.01.073