Zobrazeno 1 - 10
of 25
pro vyhledávání: '"R. L. Hengehold"'
Autor:
T. W. Kang, Pulat K. Khabibullaev, R. A. Nusretov, R. L. Hengehold, I. V. Khvan, Y. K. Yeo, Sh. U. Yuldashev
Publikováno v:
Journal of the Korean Physical Society. 53:2913-2916
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f2ce6169427c651f5d99a901cb501e9
https://doi.org/10.3938/jkps.53.2913
https://doi.org/10.3938/jkps.53.2913
Publikováno v:
Journal of Applied Physics. 81:3700-3706
The effects of 1 MeV electron irradiation on n+-p mesa diodes and solar cells fabricated from metalorganic chemical vapor deposition grown Ga0.5In0.5P on GaAs have been studied. Upon electron irradiation, Ga0.5In0.5P n+-p junction dark current increa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d2cd8163f0887f6ee85202709f51724
https://doi.org/10.1063/1.365491
https://doi.org/10.1063/1.365491
Publikováno v:
Journal of Applied Physics. 77:5763-5772
Forward and reverse bias dark current characteristics of n+p mesa diodes and solar cells fabricated from metalorganic chemical vapor deposition grown Ga0.5In0.5P have been examined, and dark current behavior has been correlated with Ga0.5In0.5P solar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e873fac4635ee036a690d9d627d41c8
https://doi.org/10.1063/1.359221
https://doi.org/10.1063/1.359221
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 13:636-641
Optical emission and absorption properties of Si1−xGex/Si superlattices grown on (100) and (110) Si substrates were investigated to determine the optimal growth conditions for these structures to be used as infrared detectors. Fully strained Si1−
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5529d0277a8c413a3841e17e298ac09b
https://doi.org/10.1116/1.579798
https://doi.org/10.1116/1.579798
Publikováno v:
Applied Physics Letters. 75:2779-2781
GaSb-based lasers show advanced capabilities over other material for the far-infrared wavelength range. However, for quantum-well (QW) laser structures of AlxGa1−xAsySb1−y/GaxIn1−xAsySb1−y/AlxGa1−xAsySb1−y grown on GaSb, each component el
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::055ee73ef14db0174a02a57a682c150a
https://doi.org/10.1063/1.125147
https://doi.org/10.1063/1.125147
Publikováno v:
Applied Physics Letters. 73:2890-2892
We report Shockley–Read–Hall (SRH), radiative, and Auger recombination rates in midinfrared laser structures from time-resolved photoluminescence using frequency upconversion. The devices studied were actual InAsSb/InAlAsSb multiple-quantum-well
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56fcccab93fc8767c9b80c5559f98614
https://doi.org/10.1063/1.122620
https://doi.org/10.1063/1.122620
Publikováno v:
Applied Physics Letters. 71:506-508
Improved isothermal capacitance transient spectroscopy (ICTS), which measures the entire capacitance transient as a function of time and temperature in a single temperature scan, has been implemented in a deep level trap analysis extending the charac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::114838065d1ef8e37b9883e24cec7dc1
https://doi.org/10.1063/1.119592
https://doi.org/10.1063/1.119592
Publikováno v:
Applied Physics Letters. 70:455-457
Results of a photoluminescence (PL) study as a function of excitation laser power, sample temperature, crystal orientation, and polarization are reported for the nonlinear optical material CdGeAs2. One broad weak PL peak near 0.38 eV, and another som
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b182e96cd17a55d127ac50d0e9349b4
https://doi.org/10.1063/1.118179
https://doi.org/10.1063/1.118179
Autor:
R. L. Hengehold, J. E. McCrae, Peter G. Schunemann, M. C. Ohmer, Thomas M. Pollak, M. R. Gregg, Yung Kee Yeo, P. H. Ostdiek
Publikováno v:
Applied Physics Letters. 64:3142-3144
Polarized photoluminescence (PL) and cathodoluminescence studies have been made as a function of excitation laser wavelength or electron beam energy for the ordered nonlinear optical material ZnGeP2 grown by the Bridgman method. The luminescence sign
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0b30006576abdd95044eb77b5b4a3d7
https://doi.org/10.1063/1.111345
https://doi.org/10.1063/1.111345
Publikováno v:
2000 International Semiconducting and Insulating Materials Conference. SIMC-XI (Cat. No.00CH37046).
The influence of arsenic doping on the electrical properties of GaN films grown on sapphire substrates by metalorganic chemical vapor deposition has been investigated using temperature dependent Hall effect and deep-level transient spectroscopy measu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16232b3de98dc057ddc42598bb867ad0
https://doi.org/10.1109/sim.2000.939191
https://doi.org/10.1109/sim.2000.939191