Zobrazeno 1 - 10
of 274
pro vyhledávání: '"R. L. Hance"'
Autor:
Elis, Marie1 (AUTHOR), Tjardts, Tim2 (AUTHOR), Shondo, Josiah Ngenev2 (AUTHOR), Aliyeva, Ainura2 (AUTHOR), Vahl, Alexander2,3,4 (AUTHOR), Schürmann, Ulrich1,4 (AUTHOR), Strunskus, Thomas2,4 (AUTHOR), Faupel, Franz2,4 (AUTHOR), Aktas, Cenk2,5 (AUTHOR), Kienle, Lorenz1,4 (AUTHOR) lk@tf.uni-kiel.de, Veziroglu, Salih2,4 (AUTHOR) sve@tf.uni-kiel.de
Publikováno v:
Small Science. Nov2024, Vol. 4 Issue 11, p1-14. 14p.
Autor:
J. P. Endle, R. L. Hance, John G. Ekerdt, Sucharita Madhukar, J. M. White, Y. M. Sun, N. Nguyen
Publikováno v:
Thin Solid Films. 388:126-133
Pyrolysis and oxidation reactions of the iridium precursor, (methylcyclopentadienyl)(1,5-cyclooctadiene)iridium (I), were studied to identify the role of O 2 in chemical vapor deposition film growth. A toluene solution of (methylcyclopentadienyl)(1,5
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca429d651ea5e744cd3d024deaa54493
https://doi.org/10.1016/s0040-6090(01)00808-2
https://doi.org/10.1016/s0040-6090(01)00808-2
Publikováno v:
Thin Solid Films. 376:73-81
Several commercially available organometallic precursors have been evaluated for metallorganic chemical vapor deposition (MOCVD) of pure ruthenium films. Of these, only a dimer, [RuC5H5(CO)2]2, proved suitable for CVD. On patterned Si3N4 and flat bar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee8342746708ac292ff67d1e1a57e81e
https://doi.org/10.1016/s0040-6090(00)01356-0
https://doi.org/10.1016/s0040-6090(00)01356-0
Autor:
N. Mettlach, X.-M. Yan, J. P. Endle, R. L. Hance, J. M. White, John G. Ekerdt, P. D. Kirsch, Y. M. Sun, Sucharita Madhukar
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 18:10-16
We have investigated the chemistry of the iridium precursor ((methylcyclopentadienyl) (1,5-cyclooctadiene))iridium (MeCpIrCOD) and have utilized the precursor for chemical vapor deposition (CVD) of iridium films. The vapor pressure of the precursor i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e01c3af76f98070e8d858725708114dd
https://doi.org/10.1116/1.582151
https://doi.org/10.1116/1.582151
Autor:
Mark H. Engelhard, S. He, R. L. Hance, Bradley M. Melnick, P. Alluri, Alan S. Lea, J. Finder, Y. Gao
Publikováno v:
Scopus-Elsevier
(Ba, Sr)TiO3 (BST) thin films have been grown on planar Ir/Si and Pt/Si substrates and on three-dimensional (3D) Ir electrodes by metalorganic chemical vapor deposition using two kinds of β-diketonate-based BST precursors. Film growth was studied as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1263a678a65d28515b6a35a7d29eec58
https://doi.org/10.1063/1.371833
https://doi.org/10.1063/1.371833
Autor:
J. M. White, Y. M. Sun, John G. Ekerdt, Sandra R. Whaley, R. L. Hance, R. Mahaffy, K. Smith, J. P. Endle
Publikováno v:
Thin Solid Films. 346:100-107
Oxygen and substrate effects on iridium film growth have been investigated by metallorganic chemical vapor deposition (MOCVD), insitu X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), and atomic force microscopy (AFM). I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46963ff22932b4e547c8f3c59312bc57
https://doi.org/10.1016/s0040-6090(98)01458-8
https://doi.org/10.1016/s0040-6090(98)01458-8
Publikováno v:
Thin Solid Films. :661-666
Free carrier concentration profiles were determined by Fourier Transform Infrared (FTIR) variable angle spectroscopic ellipsometry. The technique exploits carrier absorption in the mid-infrared spectral range and combines the sensitivity of ellipsome
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc4ccda31cb40b3bd1f90ada143322cf
https://doi.org/10.1016/s0040-6090(97)00973-5
https://doi.org/10.1016/s0040-6090(97)00973-5
Autor:
Sufi Zafar, Bradley Melnick, Paul Laberge, R. L. Hance, S.J. Gillespie, Peir Chu, Robert E. Jones, Bruce E. White, Vidya Kaushik, D. J. Taylor, Peter Zurcher
Publikováno v:
Journal of Applied Physics. 82:4469-4474
The effect of hydrogen on strontium bismuth tantalate (SrBi2Ta2O9; SBT) ferroelectric capacitors is investigated. Using several analytical techniques such as x-ray diffraction, electron diffraction, Auger electron, scanning and transmission electron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ef497cb351b49785e102714fed9d46c
https://doi.org/10.1063/1.366179
https://doi.org/10.1063/1.366179
Autor:
John G. Ekerdt, R. L. Hance, N. Mettlach, J. M. White, J. Lozano, Y. M. Sun, Sucharita Madhukar
Publikováno v:
MRS Proceedings. 596
Platinum film growth using Pt(PF3)4 precursors was investigated. The study focused on three aspects of film growth: conformality, adhesion and selective growth. Pt(PF3)4 deposited pure Pt films over a wide range of temperatures (∼200 to 400 °C). A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44ccce13d45ed515223483df80477ef4
https://doi.org/10.1557/proc-596-103
https://doi.org/10.1557/proc-596-103
Autor:
Alan S. Lea, S. He, Y. Gao, Mark H. Engelhard, P. Alluri, Bradley M. Melnick, R. L. Hance, J. Finder
Publikováno v:
MRS Proceedings. 541
Metalorganic chemical vapor deposition (MOCVD) has been used to grow (Ba,Sr)TiO3 thin films on Ir/SiO2/Si substrates. β-diketonates of Ba, Sr, and Ti were used as the precursors, and delivered to the reactor via direct-liquid injection. Growth rate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3256ee07d89f2d8bb64fd18c27b59f8
https://doi.org/10.1557/proc-541-29
https://doi.org/10.1557/proc-541-29