Zobrazeno 1 - 10
of 21
pro vyhledávání: '"R. L. Dubey"'
Autor:
Vidya Jadhav, S.K. Dubey, R. L. Dubey, I. Sulania, Dinakar Kanjilal, S. B. Vishwakarma, V. Bambole, K. Devarani Devi, A.D. Yadav
Publikováno v:
Radiation Effects and Defects in Solids. 175:695-703
Thermally grown SiO2 thin films on a silicon substrate implanted with 100 keV silicon negative ions with fluences varying from 1 × 1015 to 2 × 1017 ions cm−2 have been investigated using Electron s...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc4faae9129115bbc6da2d1a46d01169
https://doi.org/10.1080/10420150.2020.1756812
https://doi.org/10.1080/10420150.2020.1756812
Publikováno v:
Materials Today: Proceedings. 23:309-316
In the present work, semi - insulating GaAs samples implanted with 50 keV silicon negative ions with fluences varying from 1 x 1014 to 1 x 1016 ions cm-2 have been investigated using scanning electron microscopy, atomic force microscopy and X-ray dif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d14a2ef58f8e5141925c7eecf2426d6a
https://doi.org/10.1016/j.matpr.2020.02.029
https://doi.org/10.1016/j.matpr.2020.02.029
Publikováno v:
Materials Today: Proceedings. 23:345-351
100 keV energetic siliconnegative ions with fluences varying from 1 x 10 15 to 2 x 10 17 ions-cm-2 are implanted in SiO2 thin film of thickness 300 nm grown on silicon substrate. Structural properties of as-implanted samples have been investigated us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd7724fa039cc58c98b4d5b9a34a8000
https://doi.org/10.1016/j.matpr.2020.02.034
https://doi.org/10.1016/j.matpr.2020.02.034
Publikováno v:
Radiation Effects and Defects in Solids. 174:636-646
In the present work, effects of silicon negative ion implantation into semi-insulating gallium arsenide (GaAs) samples with fluences varying between 1 × 1015 and 4 × 1017 ions cm−2 at 100 k...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b990e18ff051d17b921f30223b2f3e8
https://doi.org/10.1080/10420150.2019.1632851
https://doi.org/10.1080/10420150.2019.1632851
Publikováno v:
AIP Conference Proceedings.
100 keV silicon negative ions implanted SiO2 thin films with fluences varying from 1 x 10 15 to 2 x 10 17 ion cm−2 were investigated using Electron spin resonance (ESR) at low temperature and Energy dispersive X-ray spectroscopy (EDX) techniques. E
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0df22d30bac4b745b76f1d06ca2ad080
https://doi.org/10.1063/5.0002215
https://doi.org/10.1063/5.0002215
Publikováno v:
AIP Conference Proceedings.
In recent years negative ion implantation technology has established itself as a very good alternative technique to positive ion implantation, as it has the advantage of low surface charging voltage effect, which is one of the essential criteria in d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6dec99a2a4773c0109bcd329d6e5d1e
https://doi.org/10.1063/5.0001500
https://doi.org/10.1063/5.0001500
Autor:
D. Kanjilal, S. B. Vishwakarma, A.D. Yadav, I. Sulania, V. Bambole, Vidya Jadhav, R. L. Dubey, S.K. Dubey
Publikováno v:
AIP Conference Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9872184ec7b2c92e2f580321fd54227
https://doi.org/10.1063/1.5028741
https://doi.org/10.1063/1.5028741
Publikováno v:
International Journal of Nanoscience. 19:1950019
Gallium arsenide (GaAs) implanted with silicon forming intersubband of SiGaAs is a promising material for making novel electronic and optoelectronic devices. This paper is focused on finding optimum fluence condition for formation of intersubband of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6c359ab122b13dcabeb8ea35f384906
https://doi.org/10.1142/s0219581x19500194
https://doi.org/10.1142/s0219581x19500194
Publikováno v:
Radiation Effects and Defects in Solids. 168:557-563
Surface modification of indium phosphide (InP) irradiated with 100 MeV 56Fe7+ ions for various ion fluences ranging from 5×1012 to 2×1014 cm−2was studied using Raman scattering, Fourier transform infrared (FTIR) and atomic force microscopy. The s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c275d8167aa2f1610a274fcba327209
https://doi.org/10.1080/10420150.2013.789027
https://doi.org/10.1080/10420150.2013.789027
Publikováno v:
AIP Conference Proceedings.
Single crystal InP samples were irradiated with 100 MeV Fe9+ ions for ion fluences 1x1012 and 1x1013 cm−2. Optical properties of irradiated InP was investigated by Spectroscopic Ellipsometry and UV-VIS-NIR spectroscopy. The optical parameters like,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cace9d44ee0eb96a70f745ae1800dd60
https://doi.org/10.1063/1.4946717
https://doi.org/10.1063/1.4946717