Zobrazeno 1 - 10
of 40
pro vyhledávání: '"R. L. Barns"'
Publikováno v:
Materials Science and Engineering: B. 6:29-32
High quality single crystals of semi-insulating InP were grown by the electrodynamic gradient freeze technique. The material is co-doped with the shallow acceptor zinc and the deep donor titanium. Resistivities in the 105−106 Ω cm range were measu
Publikováno v:
Journal of Electronic Materials. 18:549-552
High qualityp-type InP is critical for devices ranging from high power injection lasers to space-based solar cells. The growth of 50 mm diameter, low defect density,p-type, Zn:InP substrates has been achieved for the first time at doping levels below
Autor:
R. L. Barns
Publikováno v:
Journal of Electronic Materials. 18:703-710
A very simple method for imaging the shape of the growth interface in InP crystals using infra-red sensitive film has been developed. Images of large samples (several square inches) are obtained which show high resolution (better than 25 microns) and
Publikováno v:
Journal of Applied Physics. 51:4379-4384
The absolute orientation of the cleavage plane is determined and is related to standard rectangular coordinates. The electro‐optic coefficients appropriate to the cleavage orientation are then calculated and measured in Ti:LiNbO3 waveguides. Additi
Autor:
D. H. Smith, J. W. Nielsen, R. L. Barns, G. P. Vella‐Coleiro, S.L. Blank, F.B. Hagedorn, W. A. Biolsi
Publikováno v:
Journal of Electronic Materials. 3:693-707
The choice of magnetic garnet compositions for bubble memories is always a compromise dictated by the material requirements generated by the specifications on the memories. The three compositions reported, Y2.62Smo.38Fe3.85Ga1.15O12, Gd2.lLuO.9Fe4.4A
Autor:
R. L. Barns
Publikováno v:
Advances in X-ray Analysis. 15:330-338
All published accounts of the use of Bond's method for lattice parameter measurements have used step-scanning (at equal angle increments) of the diffraction peaks, followed by graphical or computer analysis of the data to locate the peak positions. I
Whisker Crystals of Gallium Arsenide and Gallium Phosphide Grown by the Vapor—Liquid—Solid Mechanism
Autor:
R. L. Barns, W. C. Ellis
Publikováno v:
Journal of Applied Physics. 36:2296-2301
GaAs and GaP whisker crystals have been grown by the vapor—liquid—solid mechanism of crystal growth. Gold, palladium, platinum, and gallium have been used to produce the required liquid layer. The system employing wet hydrogen developed by Frosch
Publikováno v:
Journal of Applied Physics. 35:1183-1186
A spectrophotometric method for determining the concentration of chromium in oriented and unoriented single ruby crystals is described. It makes use of the absorption coefficients for the blue and green bands and for the red lines at ∼300°K. The c
Publikováno v:
Ferroelectrics. 4:291-297
Mg-Cl-Boracite, Mg3B7013Cl, transforms from a piezoelectric cubic phase to a slightly orthorhombically-distorted ferroelectric-ferroelastic phase at Tc = 541°K, represented by IIPP(43m)Fc.Fc.P(mm2). The orthorhombic phase is highly twinned, due to d
Publikováno v:
Journal of Applied Crystallography. 3:27-32