Zobrazeno 1 - 10
of 35
pro vyhledávání: '"R. L. Aulombard"'
Autor:
Bernard Gil, M. Averous, R. L. Aulombard, Olivier Briot, Thierry Cloitre, J. Calas, A. Abounadi, N. Briot, M. Di Blasio, D. Bouchara
Publikováno v:
Physical Review B. 50:11677-11683
Thin films of high-quality ZnS were grown on (001) GaAs and (111) Si substrates by metal-organic chemical-vapor deposition. 2-K reflectivity was used to analyze various samples grown at different temperatures. The spectra show two structures at 3.801
Publikováno v:
High Pressure Research. 3:18-20
Hall coefficient (RH) and electrical resistivity measurements have been performed as a function of temperature (between 77 K and 300 K) and under hydrostatic pressures (up to 15 kbar) on a set of Se-doped GaSb samples with impurity concentrations in
Publikováno v:
High Pressure Research. 3:6-8
Electron scattering mechanisms have been investigated in Se- and S-doped GaxIn1-xSb alloys by measuring the Hall mobilities as a function of hydrostatic pressures up to 25 kbar at temperatures down to 4.2 K. The analysis of the data shows that the Br
Publikováno v:
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGYVolume: 43Issue: 1-3Pages: 16-20
European-Materials-Research-Society 1996 Spring Meeting, Symposium C: UV, Blue and Green Light Emission from Semiconductor Materials
European-Materials-Research-Society 1996 Spring Meeting, Symposium C: UV, Blue and Green Light Emission from Semiconductor Materials, Jun 1996, Strasbourg, France. pp.16-20, ⟨10.1016/S0921-5107(96)01825-9⟩
European-Materials-Research-Society 1996 Spring Meeting, Symposium C: UV, Blue and Green Light Emission from Semiconductor Materials
European-Materials-Research-Society 1996 Spring Meeting, Symposium C: UV, Blue and Green Light Emission from Semiconductor Materials, Jun 1996, Strasbourg, France. pp.16-20, ⟨10.1016/S0921-5107(96)01825-9⟩
International audience; We have grown graded index separate confinement heterostructures (GRIN-SCH) for microgun blue-green laser by low pressure MOVPE. A first study was carried out using selenium hydride, dimethyl cadmium and two dimethylzinc adduc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::14392080942792a91610fe3480e4b663
https://hal.archives-ouvertes.fr/hal-01816871
https://hal.archives-ouvertes.fr/hal-01816871
Autor:
Bernard Gil, F. Liaci, V. Mathet, M. Averous, Thierry Cloitre, Olivier Briot, N. Briot, R. L. Aulombard, L. Aigouy
Publikováno v:
Physical Review B: Condensed Matter and Materials Physics (1998-2015)
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 1996, 53 (8), pp.4708
HAL
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 1996, 53 (8), pp.4708
HAL
International audience; We report a detailed examination of the electronic structure and of the thermal transport in a graded-index separate-confinement heterostructure based on (Zn,Cd)Se wide-band-gap II-VI semiconductors, and designed in the view o
Autor:
J. Calas, Thierry Cloitre, D. Bouchara, M. Di Blasio, Pierre Bigenwald, Bernard Gil, L. Aigouy, Olivier Briot, N. Briot, R. L. Aulombard
Publikováno v:
Physical review. B, Condensed matter. 50(24)
We present a detailed study of the optical properties of short-period ZnS-ZnSe strained-layer superlattices. These superlattices have been grown by metalorganic vapor-phase epitaxy. We show that the photoluminescence exhibits a low-energy tail due to
Autor:
J. Torres, D. Coquillat, R. Legros, J. P. Lascaray, S. Ruffenach, O. Briot, R. L. Aulombard, D. Peyrade, Y. Chen, M. Le Vassor d'Yerville, E. Centeno, D. Cassagne, J. P. Albert
Publikováno v:
Physica Status Solidi (B); Nov2003, Vol. 240 Issue 2, p455-458, 4p
Publikováno v:
Japanese Journal of Applied Physics. 32:147
ZnSe/ZnTe strained-layer short period superlattices have been grown by MOVPE. Using well adapted buffer layers, we could tune the internal built-in strain of the individual layers. We studied both free standing superlattices and strained-layer superl
Publikováno v:
Solid State Communications. 63:73-76
We report experimental evidence of deep impurity states producing a localized resonance in the Γ 1c band continuum in highly doped Sn-Ga 1− x Al x As. At low temperatures and increasing pressure, electrons were transferred from the Γ 1c band to t
Publikováno v:
Journal of Applied Physics. 58:3481-3484
The first direct effective mass measurements of electrons in metalorganic vapor phase epitaxy (MOVPE) Sn‐doped Ga1−xAlxAs (x