Zobrazeno 1 - 10
of 176
pro vyhledávání: '"R. Kwor"'
Publikováno v:
Journal of The Electrochemical Society. 145:1668-1671
A series of low temperature processes incorporated in the silicon on insulator (SOI) formation using Si molecular beam epitaxial growth on porous silicon dramatically reduces the impurity ramp-up from the porous silicon substrate and lowers the dopin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a1258af72a379a1fc947fdbb9d6707c
https://doi.org/10.1149/1.1838535
https://doi.org/10.1149/1.1838535
Publikováno v:
Journal of Applied Physics. 81:492-496
A porous Si (PS) layer with a spongy microstructure on top of a dendritic microstructure was fabricated on a moderately doped p-type Si wafer using a two-step anodization process. This illustrates that in addition to substrate doping, anodization cur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efc198ddf93d46492a6ccfdf6ac68841
https://doi.org/10.1063/1.364107
https://doi.org/10.1063/1.364107
Publikováno v:
Thin Solid Films. 265:96-100
A modified diffusion-limited model for the formation of porous silicon is proposed. The modified model retains the simplicity and effectiveness of the original model by R.L. Smith et al., yet provides a more accurate description of the porous Si form
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d8a7ecdddd361c104d2d46b0320a82e
https://doi.org/10.1016/0040-6090(95)06647-0
https://doi.org/10.1016/0040-6090(95)06647-0
Publikováno v:
Thin Solid Films. 213:257-264
Thin HfO2 films were deposited on Si(100) wafers by magnetron sputtering followed by a high temperature anneal in oxygen. Structure evolution and/or allotropic transformation occurred during the annealing process. A very thin well-defined SiO2 layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4a20d3951b16e8d01b8ccf1df41f9a4
https://doi.org/10.1016/0040-6090(92)90291-i
https://doi.org/10.1016/0040-6090(92)90291-i
Publikováno v:
Journal of The Electrochemical Society. 137:221-225
Silicon dioxide films grown under dry and wet oxidation environment on beta-SiC films have been studied. The beta-SiC films had been heteroepitaxially grown on both on-axis and 2-deg off-axis (001) Si substrates. Capacitance-voltage and conductance-v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70b060c9abb27a464da55c4d36f4f7a3
https://doi.org/10.1149/1.2086370
https://doi.org/10.1149/1.2086370
Publikováno v:
International Electron Devices and Materials Symposium.
The theory of operation for the high effective channel mobility back junction SiGe PMOS is presented. The reduction of the vertical electric field and the improvement in hole confinement are explained physically. An analytical back junction bias depe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6079f4ce4b9b822cfb55137a222ef4e2
https://doi.org/10.1109/edms.1994.771138
https://doi.org/10.1109/edms.1994.771138
Publikováno v:
Proceedings of 4th International Conference on Solid-State and IC Technology.
Ultra-thin-film Silicon-On-Insulator (TFSOI) structure with 100 nm-thick and 100 /spl mu/m-wide top Si islands were fabricated using the full isolation by oxidized porous silicon (FIPOS) technique. These structures were characterized using XTEM, ASP,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7464b3ee67366ee7679aa1e20515ae84
https://doi.org/10.1109/icsict.1995.500082
https://doi.org/10.1109/icsict.1995.500082
Publikováno v:
Conference Digest Joint International Symposium on Optical Memory and Optical Data Storage 1993.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bdd27a3064f309d99627c567cfdd091
https://doi.org/10.1109/omods.1993.696765
https://doi.org/10.1109/omods.1993.696765
Publikováno v:
ChemInform. 21
Silicon dioxide films grown under dry and wet oxidation environment on beta-SiC films have been studied. The beta-SiC films had been heteroepitaxially grown on both on-axis and 2-deg off-axis (001) Si substrates. Capacitance-voltage and conductance-v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a95de85c997563d18970427677e6d52f
https://doi.org/10.1002/chin.199013328
https://doi.org/10.1002/chin.199013328
Publikováno v:
Journal of The Electrochemical Society. 132:1201-1206
Etude de l'effet d'un prerecuit a basse temperature suivi d'un recuit thermique rapide sur Si implante par des ions As + de 80 keV (doses de 1×10 15 et 1×10 16 cm −2 ). Discussion des proprietes electriques de Si et de la distribution des impuret
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09e0c820820652bec1625fbfeeb7bb37
https://doi.org/10.1149/1.2114059
https://doi.org/10.1149/1.2114059