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Publikováno v:
Soldering & Surface Mount Technology. 32:235-240
Purpose The purpose of this paper is to analyze the individual steps during the printing of capacitor structures. The method of substrate preparation, the obtained roughness of conductive and dielectric layers are examined. Moreover, the capacitances
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31eaaff973cd750743c4c6a324b83557
https://doi.org/10.1108/ssmt-11-2019-0039
https://doi.org/10.1108/ssmt-11-2019-0039
Publikováno v:
Applied Surface Science. 484:1234-1243
The mixed thermal oxidation of the high temperature aluminium nitride (HT-AlN) epitaxial layer leads to the formation of the stable aluminium oxide having a developed surface area, potentially suitable for sensor applications. In this work, we studie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5b79df45a66084def4b295957473c7e
https://doi.org/10.1016/j.apsusc.2019.03.319
https://doi.org/10.1016/j.apsusc.2019.03.319
Autor:
Patrycja Suchorska-Woźniak, Rafal Szukiewicz, Maciej Krawczyk, Helena Teterycz, R. Korbutowicz, Maciej Kuchowicz
Publikováno v:
Nanomaterials, Vol 11, Iss 456, p 456 (2021)
Nanomaterials
Volume 11
Issue 2
Nanomaterials
Volume 11
Issue 2
Gas sensitive structures made of nanowires exhibit extremally large specific surface area, and a great number of chemically active centres that can react with the ambient atmosphere. This makes the use of nanomaterials promising for super sensitive g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9632125096a66aff57e897fdc93a0144
https://www.mdpi.com/2079-4991/11/2/456
https://www.mdpi.com/2079-4991/11/2/456
Publikováno v:
Materials Science-Poland, Vol 35, Iss 2, Pp 412-420 (2017)
An attempt has been undertaken to produce gallium oxide nanowires by thermal synthesis from metallic gallium source at atmospheric pressure. Silicon substrates of (1 0 0) and (1 1 1) orientation with and without silicon oxide layers (0.5 μm) were us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1ad1645445a6f4c242c1acd5fdaf8498
http://www.degruyter.com/view/j/msp.2017.35.issue-2/msp-2017-0026/msp-2017-0026.xml?format=INT
http://www.degruyter.com/view/j/msp.2017.35.issue-2/msp-2017-0026/msp-2017-0026.xml?format=INT
Publikováno v:
Journal of Materials Science: Materials in Electronics. 28:13937-13949
This paper presents an analysis of thermal oxidation kinetics for Aluminium nitride (AlN) epitaxy layers using three methods: dry, wet and mixed. The structures thus obtained were examined by means of scanning electron microscope, energy-dispersive X
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb11b28adf6e84c3e0715c8fc55dedf0
https://doi.org/10.1007/s10854-017-7243-5
https://doi.org/10.1007/s10854-017-7243-5
Autor:
Jarosław Serafińczuk, Joanna Prazmowska, Regina Paszkiewicz, Andrzej Stafiniak, R. Korbutowicz
Publikováno v:
Advances in Electrical and Electronic Engineering, Vol 17, Iss 2, Pp 229-233 (2019)
In this work, the thermal synthesis and characterization of gallium oxide and indium oxide nanowires using vapour-liquid-solid mechanism at atmospheric pressure were described. Au nanoislands formed by the solid-state dewetting process of various thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6f20b446b64238e6e3e50667517fa632
https://doi.org/10.15598/aeee.v17i2.3356
https://doi.org/10.15598/aeee.v17i2.3356
Autor:
R. Korbutowicz, Adrian Zakrzewski
Publikováno v:
Materials Science-Poland, Vol 34, Iss 1, Pp 157-163 (2016)
Three methods of AlN layers oxidation: dry, wet and mixed (wet with oxygen) were compared. Some physical parameters of oxidized thin films of aluminum nitride (AlN) layers grown on silicon Si(1 1 1) were investigated by means Energy-Dispersive X-ray
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cecfe3cc304915d4782c7a7253497d75
https://doi.org/10.1515/msp-2016-0010
https://doi.org/10.1515/msp-2016-0010
Publikováno v:
Crystal Research and Technology. 43:1339-1344
Raman scattering spectroscopy was utilized for investigation of the structural properties of thick GaN layers. These layers with thickness ∼ 40 μm have been grown by HVPE technique on the sapphire substrates. The investigations have been focused o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44094f9473d209c91895c33277038b45
https://doi.org/10.1002/crat.200800245
https://doi.org/10.1002/crat.200800245
Autor:
Jan Misiewicz, Jarosław Serafińczuk, Artur Podhorodecki, Marek Tłaczała, R. Korbutowicz, Regina Paszkiewicz, Joanna Prazmowska, Adam Szyszka
Publikováno v:
Vacuum. 82:988-993
The influence of deposition conditions of nucleation GaN layer on the properties of high-temperature GaN layer, grown on sapphire substrates, was investigated. The hydride vapor phase epitaxy (HVPE) three-section horizontal hot-wall furnace technique
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::043b3ef538f5db7a26654d8a2382471d
https://doi.org/10.1016/j.vacuum.2008.01.037
https://doi.org/10.1016/j.vacuum.2008.01.037