Zobrazeno 1 - 10
of 21
pro vyhledávání: '"R. Knarr"'
Autor:
T. Nogami, S. Nguyen, H. Huang, N. Lanzillo, H. Shobha, J. Li, B. Peethela, A. Parbatani, B. van Schravendijk, B. Varadarajan, I. Narkeviciute, E. Srinivasan, K. Sharma, R. Knarr, S. Schmitz, V. Ramanan, D. Edelstein
Publikováno v:
2021 IEEE International Electron Devices Meeting (IEDM).
Autor:
C. Labelle, Steven E. Molis, Shariq Siddiqui, R. Knarr, B. L'lherron, Frank W. Mont, Donald F. Canaperi, B. Peethala
Publikováno v:
Microelectronic Engineering. 161:98-103
In this work, ultra-dilute HF systems with the addition of functional hydrocarbon as an additive at elevated temperatures were evaluated to remove the post reactive ion etching (RIE) residues in a controlled chamber with ambient O2 concentration
Autor:
E. Bozzoni, S. Congiu, S. Gazzo, R. Knarr III, F. La Rosa, G. Manfredi, D. Comoretto, P. Lova, C. Soci, G. Ianniello, P. Rizzo, C. Daniel, G. Guerra, E. Martinelli, G. Galli, K. Sparnacci, M. Laus, L. Boarino, LANZI, MASSIMILIANO, ZUCCHERI, GIAMPAOLO
We report on on all-polymer photonic crystals having different dimensionality. One-dimensional photonic crystals i.e. Distributed Bragg Reflectors (DBR) made of cellulose acetate and ZnO-polystyrene (PS) nanocomposites or Poly(p-phenyleneoxide) (PPO)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______4094::40c92dd32a95b21ccf5ee3052128ea62
http://hdl.handle.net/11585/489369
http://hdl.handle.net/11585/489369
Publikováno v:
Transportation Research Record: Journal of the Transportation Research Board. 1624:118-124
As part of a multistate research program on use of high-performance concrete (HPC) in highway bridges, a bridge originally designed as a three-span adjacent box girder bridge was converted to a single-span bridge by using 70-MPa HPC and 15-mm strands
Autor:
Dechao Guo, Myung-Hee Na, Y. Tsang, R. Mo, Huiming Bu, Karthik Ramani, Kathryn T. Schonenberg, Eduard A. Cartier, Naim Moumen, R. Knarr, Wei He, M. Hargrove, Ricardo A. Donaton, Siddarth A. Krishnan, Keith Kwong Hon Wong, James K. Schaeffer, Ravikumar Ramachandran, Eric C. Harley, X. Wang, E. Luckowski, Vijay Narayanan, K. Henson, Michael P. Chudzik, B. Zhang, W. Yan, D.-G. Park, Rashmi Jha, Martin M. Frank, Michael A. Gribelyuk, Unoh Kwon, Mukesh Khare, R. Arndt, Todd Bailey, Yue Liang, Troy L. Graves-Abe, C. DeWan, R. Carter, Joseph F. Shepard
Publikováno v:
2008 IEEE International Electron Devices Meeting.
CMOS devices with high-k/metal gate stacks have been fabricated using a gate-first process flow and conventional stressors at gate lengths of 25 nm, highlighting the scalability of this approach for high performance SOI CMOS technology. AC drive curr
Autor:
M. Ieong, C.Y. Sung, S. Deshpande, X. Chen, L. Deligianni, S. Cohen, C. Brodsky, S. Allen, C. Ouyang, Y. Li, B. Haran, A. Simon, B. Baker-O'Neal, C.-C. Yang, S. Rossnagel, R. Knarr, X. Shao, K. Wong, C. Sheraw, A. Topol
Publikováno v:
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..
A key challenge for high performance CMOS devices is the external parasitic resistance. This paper addresses scaling trends of contact level and discusses emerging constraints related to the properties of materials used in the current technology. Exp
Autor:
Feng Q. Liu, Stan D. Tsai, W. Lu, Liang-Yuh Chen, M. Naujok, Antoine P. Manens, J. Salfelder, X. Sakamoto, X. Wang, R. Knarr, Alain Duboust, Y. Moon, L. Economikos, P. Ong, S. Shrauti, Siew Neo, W. Swart
Publikováno v:
Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729).
A novel copper (Cu) planarization process, Ecmp, integrating electro-chemical mechanical polishing capability on a 300mm CMP platform with low down force conventional polishing processes is being developed and evaluated on low-k CVD devices. In the i
Publikováno v:
The 2003 Congress on Evolutionary Computation, 2003. CEC '03..
Combining horizontal flow treatment wells (HFTWs) with in situ biodegradation is an innovative approach with the potential to remediate perchlorate-contaminated groundwater. A model has been developed that combines the groundwater flow induced by HFT
Autor:
T. Gerardi, R. Knarr
Publikováno v:
24th Structures, Structural Dynamics and Materials Conference.
Akademický článek
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