Výsledky vyhledávání - "R. Kh. Zhukavin"

Akademický článek

Terahertz transient stimulated emission from doped silicon

Autor: S. G. Pavlov, N. Deßmann, A. Pohl, R. Kh. Zhukavin, T. O. Klaassen, N. V. Abrosimov, H. Riemann, B. Redlich, A. F. G. van der Meer, J.-M. Ortega, R. Prazeres, E. E. Orlova, A. V. Muraviev, V. N. Shastin, H.-W. Hübers

Publikováno v: APL Photonics, Vol 5, Iss 10, Pp 106102-106102-8 (2020)

Transient-type stimulated emission in the terahertz (THz) frequency range has been achieved from phosphorus doped silicon crystals under optical excitation by a few-picosecond-long pulses generated by the infrared free electron lasers FELIX and CLIO.

Externí odkaz: https://doaj.org/article/cbca8294ca58479581a4e5c72b4baf60

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Akademický článek

Competing Inversion-Based Lasing and Raman Lasing in Doped Silicon

Autor: S. G. Pavlov, N. Deßmann, B. Redlich, A. F. G. van der Meer, N. V. Abrosimov, H. Riemann, R. Kh. Zhukavin, V. N. Shastin, H.-W. Hübers

Publikováno v: Physical Review X, Vol 8, Iss 4, p 041003 (2018)

We report on an optically pumped laser where photons are simultaneously generated by population inversion and by stimulated Raman scattering in the same active medium, namely crystalline silicon doped by bismuth (Si∶Bi). The medium utilizes three e

Externí odkaz: https://doaj.org/article/509c33305b594fc48ac75ec24b73c20c

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Akademický článek

Terahertz Stimulated Emission from Silicon Doped by Hydrogenlike Acceptors

Autor: S. G. Pavlov, N. Deßmann, V. N. Shastin, R. Kh. Zhukavin, B. Redlich, A. F. G. van der Meer, M. Mittendorff, S. Winnerl, N. V. Abrosimov, H. Riemann, H.-W. Hübers

Publikováno v: Physical Review X, Vol 4, Iss 2, p 021009 (2014)

Stimulated emission in the terahertz frequency range has been realized from boron acceptor centers in silicon. Population inversion is achieved at resonant optical excitation on the 1Γ_{8}^{+} → 1Γ_{7}^{−}, 1Γ_{6}^{−}, 4Γ_{8}^{−} intracen

Externí odkaz: https://doaj.org/article/bd635cb1203142c1b881ae6866b7844b

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Detection of Ramsey Oscillations in Germanium Doped with Shallow Donors upon the Excitation of the 1s -> 2p(0) Transition

Autor: R. Kh. Zhukavin, P. A. Bushuikin, V. V. Kukotenko, Yu. Yu. Choporova, N. Deßmann, K. A. Kovalevsky, V. V. Tsyplenkov, V. V. Gerasimov, B. A. Knyazev, N. V. Abrosimov, V. N. Shastin

Publikováno v: Journal of Experimental and Theoretical Physics Letters, 116, 137-143
Journal of Experimental and Theoretical Physics Letters, 116, 3, pp. 137-143

Contains fulltext : 283231.pdf (Publisher’s version ) (Closed access)

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dd622df9ca5851335a2c2e018d57a0ae
https://doi.org/10.1134/s0021364022601191

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Terahertz Stimulated Emission under the Optical Resonant Excitation of Germanium Doped with Shallow Donors

Autor: R. Kh. Zhukavin

Publikováno v: Semiconductors. 55:804-807

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4984231e8883f04e58d083e75c0f35dd
https://doi.org/10.1134/s1063782621090244

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Influence of uniaxial stress on phonon-assisted relaxation in bismuth-doped silicon

Autor: R. Kh. Zhukavin, S. G. Pavlov, N. Stavrias, K. Saeedi, K. A. Kovalevsky, P. J. Phillips, V. V. Tsyplenkov, N. V. Abrosimov, H. Riemann, N. Deβmann, H.-W. Hübers, V. N. Shastin

Publikováno v: Journal of Applied Physics, 127
Journal of Applied Physics
Journal of Applied Physics, 127, 3

The relaxation of electrons bound to bismuth donors in silicon and the effect of uniaxial stress have been studied using the time-resolved single color pump-probe technique. In unstressed Si:Bi, an excited 2p0 donor state is resonantly coupled with t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::efb7b4b03437b66c758f966ed799aaea
https://hdl.handle.net/2066/218199

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Terahertz Silicon Lasers

Autor: S. G. Pavlov, H.-W. Hübers, M. H. Rümmeli, J. N. Hovenier, T. O. Klaassen, R. Kh. Zhukavin, A. V. Muravjov, V. N. Shastin

Publikováno v: Towards the First Silicon Laser ISBN: 9781402011948

Terahertz silicon lasers are based on intracenter transitions of group-V donors. The peculiarities due to electron-phonon interaction and the state-of-the-art performance such as frequency tunability by stress or magnetic field are discussed.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2074e22d4171e802f9bc9cd3a91910d3
https://doi.org/10.1007/978-94-010-0149-6_29

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Akademický článek

Stimulated terahertz emission from arsenic donors in silicon.

Autor: Hübers, H.-W., Pavlov, S.G., Riemann, H., Abrosimov, N.V., R. Kh. Zhukavin, N.V., Shastin, V.N.

Publikováno v: Applied Physics Letters; 5/3/2004, Vol. 84 Issue 18, p3600-3602, 3p, 1 Diagram, 2 Graphs

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