Zobrazeno 1 - 10
of 27
pro vyhledávání: '"R. Kazerounian"'
Autor:
Mohammad Kazemi, Ali R. Kazerounian
Publikováno v:
Scientia Iranica.
Present codes of practice do not consider the effect of arrangement of partitions in the plan of structure on the seismic demands of these non-structural components. In this paper, a modification factor has been proposed to modify provisions for thos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d903b161b1f5f45faf9e3b46e0ed7d05
https://doi.org/10.24200/sci.2018.20201
https://doi.org/10.24200/sci.2018.20201
Autor:
Anirban Roy, B. Eitan, R. Kazerounian, A. Ziklik, Alex Shubat, C.Q. Trinh, A. Zaliznyak, Y. Cedar
Publikováno v:
IEEE Journal of Solid-State Circuits. 27:515-529
A family of user-programmable peripherals, utilizing an integration strategy based on a programmable system device (PSD) concept, is described. Specifically, PSD is an efficient and highly configurable integration of high-density memory and LSI level
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68ce061021fe4c9626680da37097f673
https://doi.org/10.1109/4.126539
https://doi.org/10.1109/4.126539
Publikováno v:
IEEE Electron Device Letters. 16:169-171
This paper presents a new SRAM cell concept which offers cell scaling without requiring complicated, specialized processing technology. The proposed cell utilizes a bipolar transistor in an open-base (base is floating) configuration as a simple means
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ec25afe049495636f73583ce6b6b804
https://doi.org/10.1109/55.382229
https://doi.org/10.1109/55.382229
Publikováno v:
Technical Digest., International Electron Devices Meeting.
A 5-V-only flash EPROM (erasable programmable read-only memory) cell is described which is programmed by channel-hot-electron injection and erased through a poly-poly oxide. The cell consists of a self-aligned split-gate EPROM and a polysilicon erase
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b2accf1626a777500c9867d491f7ed4
https://doi.org/10.1109/iedm.1988.32849
https://doi.org/10.1109/iedm.1988.32849
Autor:
Hosam Haggag, L. Anderson, D. Wenzbauer, P. Nielsen, M. Randolph, J. Beckett, R. Irani, Albert Bergemont, B. Eitan, W. Breinholt, J. Diroll, E. Shacham, L. Hoang, R. Salter, A. Kablanian, S. Pearce, Graham R. Wolstenholme, J. Barrell, R. Kazerounian
Publikováno v:
1993 International Symposium on VLSI Technology, Systems, and Applications Proceedings of Technical Papers.
The alternate metal virtual ground (AMG) has recently been introduced as a scaling concept for an EPROM array. The AMG cell size in a 0.8 mu m technology (2.56 mu m/sup 2/) is smaller than the cell size on a conventional architecture implemented in a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::637af557c48c9648dabb64bcda822c7e
https://doi.org/10.1109/vtsa.1993.263675
https://doi.org/10.1109/vtsa.1993.263675
Publikováno v:
Scopus-Elsevier
In this paper we compare six different multilevel flash cells, viz., common ground, DINOR, AND, AMG, split gate and NAND. The key conclusions are that the hot electron effect lends itself better than tunneling as the multilevel programming mechanism.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bfcf1b16c54c750e1ce153efaa2d8ad0
https://doi.org/10.1109/iedm.1996.553147
https://doi.org/10.1109/iedm.1996.553147
Autor:
P. Nielson, A. Kablanian, B. Eitan, E. Shacham, J. Perry, R. B. Sethi, K. Chhor, M. Shamay, G.A. Rezvani, Graham R. Wolstenholme, H. Gaffur, P. Kauk, R. Kazerounian, Hosam Haggag, L. Anderson, R. Irani, Albert Bergemont, Anirban Roy
Publikováno v:
International Electron Devices Meeting 1991 [Technical Digest].
The alternate metal virtual ground EPROM array (AMG) is introduced as a new scaling concept. This array dramatically reduces cell size by making poly pitch the only limitation in both X and Y directions. The AMG concept scales cell size by sharing on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ba28319e860137932fd0ca9f626293e
https://doi.org/10.1109/iedm.1991.235441
https://doi.org/10.1109/iedm.1991.235441
Publikováno v:
IEEE Electron Device Letters. 12:450-452
A new erasable programmable read-only memory (EPROM) array concept that reduces the cell size to the poly pitch in both directions is introduced. The key concepts that made the dramatic scaling possible are the virtual ground array with one metal lin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ebb698c6702cfc06672cbb8e2f55b16
https://doi.org/10.1109/55.119162
https://doi.org/10.1109/55.119162
Publikováno v:
30th Annual Proceedings Reliability Physics 1992.
The development of high-density flash EPROMs is being directed towards scalability, sector erase, and 5-V-only operation. For the flash concepts that are utilizing channel hot electron injection for the programming, a new disturbance mechanism caused
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ef82dc3d3ffc460980c95524ca0fcd1
https://doi.org/10.1109/relphy.1992.187625
https://doi.org/10.1109/relphy.1992.187625
Publikováno v:
1991 Symposium on VLSI Circuits.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a88e7928f4e4c71a9f0f8a2e6c6a383c
https://doi.org/10.1109/vlsic.1991.760060
https://doi.org/10.1109/vlsic.1991.760060