Zobrazeno 1 - 10
of 27
pro vyhledávání: '"R. Kachtouli"'
Autor:
Bernard Previtali, Laurent Brunet, B. Mathieu, Perrine Batude, J-P. Nieto, L. Pasini, Pascal Besson, I. Toque-Tresonne, F. Aussenac, Fulvio Mazzamuto, P. Acosta-Alba, Sebastien Kerdiles, Karim Huet, J.M. Hartmann, M.-P. Samson, N. Rambal, F. Ibars, R. Kachtouli, M. Vinet, V. Lapras, C. Fenouillet-Beranger, A. Roman
Publikováno v:
2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).
In this paper, the energy process window of nanosecond (ns) laser annealing for junctions activation has been determined for several dopants (As, P, BF2). The different recrystallization states observed when tuning laser energy density are explained
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6cc96488373629f31f430c0bd83507d1
https://doi.org/10.1109/s3s.2016.7804375
https://doi.org/10.1109/s3s.2016.7804375
Autor:
Marc Veillerot, I. Toque-Tresonne, Pascal Besson, B. Mathieu, Fulvio Mazzamuto, P. Acosta Alba, F. Aussenac, Karim Huet, Sebastien Kerdiles, R. Kachtouli, C. Fenouillet-Beranger
Publikováno v:
2016 21st International Conference on Ion Implantation Technology (IIT).
In this work it is shown that laser annealing can be used for electrical activation of phosphorus implanted in extremely thin SOI structures. We characterized crystallinity, surface morphology, dopant diffusion and activation as a function of the las
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7aea74344a83cec4cb0d932eee2e5a47
https://doi.org/10.1109/iit.2016.7882896
https://doi.org/10.1109/iit.2016.7882896
Autor:
L. Pasini, Perrine Batude, V. Benevent, Maud Vinet, Thomas Signamarcheix, R. Kachtouli, Sébastien Barnola, A. Royer, C. Vizioz, F. Fournel, J.M. Hartmann, G. Romano, N. Allouti, Sebastien Kerdiles, Christophe Morales, A. Seignard, C. Agraffeil, Frederic Boeuf, F. Ponthenier, Vincent Delaye, F. Deprat, M. Jourdan, L. Benaissa, L. Baud, C. Euvrard-Colnat, O. Faynot, Bernard Previtali, C. Guedj, P. Besombes, C. Comboroure, Claire Fenouillet-Beranger, L. Hortemel, Laurent Brunet, Claude Tabone, Nicolas Posseme, Alain Toffoli, C.-M. V. Lu, Christian Arvet, Pascal Besson
Publikováno v:
2016 IEEE Symposium on VLSI Technology.
For the first time, a full 3D CMOS over CMOS CoolCube™ integration is demonstrated with a top level compatible with state of the art high performance FDSOI (Fully-Depleted Silicon On Insulator) process requirements such as High-k/metal gate or rais
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9ed124b81563782c46dfeb93f1c6bd0
https://doi.org/10.1109/vlsit.2016.7573428
https://doi.org/10.1109/vlsit.2016.7573428
Autor:
Pascal Besson, B. Mathieu, Hervé Denis, Claire Fenouillet-Beranger, Karim Huet, P. Acosta Alba, Fulvio Mazzamuto, R. Kachtouli, Marc Veillerot, I. Toque-Tresonne, Sebastien Kerdiles
Publikováno v:
2016 16th International Workshop on Junction Technology (IWJT).
The different regimes encountered when submitting ultra-thin SOI structures implanted with arsenic to single pulse laser annealing with increasing energy density, are identified. It is found that nanosecond UV laser annealing can be successfully appl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a64e691dfab05f7cead2a49c5f7ea62e
https://doi.org/10.1109/iwjt.2016.7486677
https://doi.org/10.1109/iwjt.2016.7486677
Autor:
J. Guillan, Didier Louis, N. Lopez, D. Rébiscoul, A. Roman, L.G. Gosset, R. Kachtouli, Lucile Broussous, G. Passemard
Publikováno v:
Solid State Phenomena. 134:321-324
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aaffbca313bdcf161e58052e59d42736
https://doi.org/10.4028/www.scientific.net/ssp.134.321
https://doi.org/10.4028/www.scientific.net/ssp.134.321
Autor:
C.M.V. Lu, C. Bout, C. Fenouillet-Beranger, A. Roule, M.P. Samson, B. Previtali, C. Arvet, A. Michallet, N. Rochat, S. Favier, R. Kachtouli, V. Loup, P. Besson, M. Garcia-Barros, N. Posseme, F. Pierre, P. Maury, D. Benoit, P. Batude, M. Vinet, T. Skotnicki
Publikováno v:
Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::534a2713e48f5c968b72975fe22fbdfc
https://doi.org/10.7567/ssdm.2015.ps-2-13
https://doi.org/10.7567/ssdm.2015.ps-2-13
Autor:
A. Roman, A. Seignard, Perrine Batude, C. Ribiere, O. Pollet, V. Benevent, E. Gourvest, M.-P. Samson, N. Rambal, Lucile Arnaud, L. Brunet, Hervé Denis, Y. Loquet, M. Vinet, V. Lapras, L. Emery, V. Lu, S. Maitrejean, Vincent Jousseaume, P. Besson, C.Fenouillet Beranger, G. Druais, C.Euvrard Colnat, Bernard Previtali, F. Deprat, R. Kachtouli, S. Kerdiles, Y.Le Friec, F. Aussenac
Publikováno v:
Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::479981eb26c9e73eb3604e339f643d59
https://doi.org/10.7567/ssdm.2015.k-4-3
https://doi.org/10.7567/ssdm.2015.k-4-3
Autor:
J.P. Barnes, V. Lapras, P. Acosta Alba, N. Rambal, L. Hortemel, F. Piegas Luce, P. Rivallin, Dominique Lafond, Perrine Batude, Pascal Besson, M.-P. Samson, Sebastien Kerdiles, M. Vinet, B. Mathieu, A. Royer, H. Dansas, R. Kachtouli, M. Casse, Shay Reboh, V. Lu, O. Rozeau, L. Pasini, C.Fenouillet Beranger, Bernard Previtali, Laurent Brunet, F. Aussenac, Benoit Sklenard, F. Deprat
Publikováno v:
Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::092b52357e8e8fd31b34f1def6a20d04
https://doi.org/10.7567/ssdm.2015.n-1-1
https://doi.org/10.7567/ssdm.2015.n-1-1
Autor:
S. Chhun, R. Kachtouli, B. Mathieu, F. Aussenac, X. Garros, M. Casse, M.-P. Samson, A. Laurent, J.P. Barnes, L. Pasini, C. Reita, E. Richard, Claire Fenouillet-Beranger, M. Vinet, E. Petitprez, N. Guillot, Pascal Besson, Bernard Previtali, Fabrice Nemouchi, Perrine Batude, Pierre Perreau, V. Benevent, I. Toque-Tresonne, D. Barge, Laurent Brunet, Karim Huet, Sebastien Kerdiles, G. Druais, F. Deprat, H. Dansas, D. Lafond, V. Lu, N. Rambal
Publikováno v:
2014 IEEE International Electron Devices Meeting.
For the first time the maximum thermal budget of in-situ doped source/drain State Of The Art (SOTA) FDSOI bottom MOSFET transistors is quantified to ensure transistors stability in Sequential 3D (CoolCube™) integration. We highlight no degradation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4900ebd2c14b7ee98c73dbf874dd9c82
https://doi.org/10.1109/iedm.2014.7047121
https://doi.org/10.1109/iedm.2014.7047121
Autor:
Christophe Aumont, Emmanuel Rolland, Laurent Bally, R. Hida, A. Jouve, M. Pellat, L. Gabette, Maxime Argoud, S. Cheramy, L. Vignoud, P. Montmeat, Raphael Eleouet, F. Fournel, C. Donche, K. Vial, C. Ratin, V. Loup, P. Coudrain, Thierry Mourier, C. Laviron, R. Kachtouli, Jerome Dechamp, N. Sillon, Nacima Allouti, Thomas Magis
Publikováno v:
2013 IEEE 63rd Electronic Components and Technology Conference.
Three-dimensional (3D) stacked IC technologies have become a central topic over the past few years, and start to become reality with the introduction of 3D devices in commercialization. Among the technical challenges raised by this technology, thin w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::221359d84e797e50085295156718b022
https://doi.org/10.1109/ectc.2013.6575557
https://doi.org/10.1109/ectc.2013.6575557