Zobrazeno 1 - 2
of 2
pro vyhledávání: '"R. K. Vasudevan"'
Autor:
S. Somnath, K. J. H. Law, A. N. Morozovska, P. Maksymovych, Y. Kim, X. Lu, M. Alexe, R. Archibald, S. V. Kalinin, S. Jesse, R. K. Vasudevan
Publikováno v:
Nature Communications, Vol 9, Iss 1, Pp 1-11 (2018)
Scanning probe microscopy is widely used to characterize material properties with atomic resolution, yet electronic property mapping is normally constrained by slow data acquisition. Somnath et al. show a current–voltage method, which enables fast
Externí odkaz:
https://doaj.org/article/0560a29d3d0542a29e7e7ef7cbf10762
Autor:
C.-Y. Kuo, Z. Hu, J. C. Yang, S.-C. Liao, Y. L. Huang, R. K. Vasudevan, M. B. Okatan, S. Jesse, S. V. Kalinin, L. Li, H. J. Liu, C.-H. Lai, T. W. Pi, S. Agrestini, K. Chen, P. Ohresser, A. Tanaka, L. H. Tjeng, Y. H. Chu
Publikováno v:
Nature Communications, Vol 7, Iss 1, Pp 1-7 (2016)
The coupling of ferroelectric and antiferromagnetic order in BiFeO3 makes it appealing for applications however the presence of domain structure acts to undermine this potential. Here, the authors demonstrate BiFeO3thin films with a single domain of
Externí odkaz:
https://doaj.org/article/1f305172b6a641bf892ce124b56d9726