Zobrazeno 1 - 10 of 30 pro vyhledávání: '"R. K. Sarin"'
1
Akademický článek
A Novel Circular Slotted Microstrip-Fed Patch Antenna with three Triangle Shape Defected Ground Structure for Multiband Applications
Autor: A. Jaiswal, R. K. Sarin, B. Raj, S. Sukhija
Publikováno v: Advanced Electromagnetics, Vol 7, Iss 3, Pp 56-63 (2018)
In this paper, a novel circular slotted rectangular patch antenna with three triangle shape Defected Ground Structure (DGS) has been proposed. Radiating patch is made by cutting circular slots of radius 3 mm from the three sides and center of the con
Externí odkaz: https://doaj.org/article/8c3b21b5427241fbb33a137603e0deb0
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2
Akademický článek
A First-Order Primal-Dual Method for Saddle Point Optimization of PAPR Problem in MU-MIMO-OFDM Systems
Autor: D. Singh, R. K. Sarin
Publikováno v: Radioengineering, Vol 27, Iss 2, Pp 549-556 (2018)
This paper investigates the use of a particular splitting-based optimization technique for constrained l∞-norm based peak-to-average power ratio (PAPR) reduction problem in multiuser orthogonal frequency-division multiplexing (OFDM) based multiple-
Externí odkaz: https://doaj.org/article/925422ad4413404391b6dae4266a79d6
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4
Performance Analysis of Normally-on Dual Gate Algan/Gan Hemt
Autor: Manisha Rao, Nitesh Kashyap, R. K. Sarin, Ravi Ranjan
Publikováno v: Transactions on Electrical and Electronic Materials. 22:691-699
This paper presents the novel normally-on dual gate (DG) AlGaN/GaN high electron mobility transistor. At high frequency, the dual gate structure gives superlative immunity over short channel effects. Multiple 2DEG channel regions in dual gate AlGaN/G
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c2d90fc9fe16b62c64b4cad3d35e1944
https://doi.org/10.1007/s42341-021-00286-4
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5
6-T and 7-T SRAM CELL Design Using Doping-Less Charge Plasma TFET
Autor: R. K. Sarin, S. Intekhab Amin, Harsimran Kaur, Sunny Anand
Publikováno v: Silicon. 13:4091-4100
Charge plasma based doping-less tunnel FETs (DLTFETs) are attracting attention for providing reduced leakage currents and high ION/IOFF ratio. In this work, a new GaAs based gate stack charge plasma doping-less tunnel FET (GaAs based GSDLTFET) has be
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::38c7286ef80960e1ef02efc9e4d132fe
https://doi.org/10.1007/s12633-020-00713-w
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7
A Low-Power Hybrid VS-CNTFET-CMOS Ring Voltage-Controlled Oscillator Using Current Starved Power Switching Technology
Autor: Vikas Kumar Malav, Ashish Raman, R. K. Sarin, Ravi Ranjan
Publikováno v: Energy Systems in Electrical Engineering ISBN: 9789811579363
In analog and digital circuit, voltage controlled oscillator (VCO) plays a very important role in electronic circuits such as phase locked loop (PLL), radio frequency integrated circuits (RFICs), analog to digital converter (ADC) and other circuits.
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::85c73a6b0fe23ef576de4998bb7d0023
https://doi.org/10.1007/978-981-15-7937-0_10
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8
High-Frequency CNTFET-Based Voltage-Controlled Oscillator for PLL Application
Autor: Ravi Ranjan, Yogesh Kumar, R. K. Sarin, Ashish Raman
Publikováno v: Micro-Electronics and Telecommunication Engineering ISBN: 9789811523281
In this paper, a high-frequency differential ring dual-delay voltage-controlled oscillator (DR-VCO) is proposed. This 9 GHz DR-VCO is designed using 45 nm CNTFET technology. CNTFET is faster than MOSFET, and hence it provides a high tuning range. VCO
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::21b2dd7f0773c2033370caf345058622
https://doi.org/10.1007/978-981-15-2329-8_42
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