Zobrazeno 1 - 10
of 13
pro vyhledávání: '"R. K. Bommali"'
Publikováno v:
Thin Solid Films. 662:21-26
We report effect of nanostructured silicon rich silicon nitride (SRSN) thin films of different thickness as a top layer on Si-solar cell on various characteristics including efficiency of the cells. Thin films of various thickness were grown on Si su
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 410:164-170
We report the effect of swift heavy ion irradiation on non-stoichiometric hydrogenated amorphous silicon nitride films (a-SiNx:H), grown on Si substrate by Photo- Chemical vapor deposition. A significant increase in refractive index of films due to S
Publikováno v:
Optical Materials. 72:86-90
A fast and simple femtosecond laser based methodology for efficient Surface Enhanced Raman Scattering (SERS) substrate fabrication has been proposed. Both nano scaffold silicon (black silicon) and gold nanoparticles (Au-NP) are fabricated by femtosec
Autor:
Harsh Gupta, Pankaj Srivastava, Himanshu Srivastava, R. K. Bommali, A. K. Srivastava, Santanu Ghosh
Publikováno v:
Journal of Applied Physics. 129:035108
This work reports the correlation of changes in structural and optical properties of a-SiNx:H thin films irradiated with 100 MeV Au8+ at various fluences. Cross-sectional TEM studies show the evolution of discontinuous ion tracks with a radius of 3 n
Publikováno v:
AIP Conference Proceedings.
The irradiation of sub-stoichiometric amorphous hydrogenated Silicon nitride (a-SiNx:H) films with 100 MeV Ni7+ ions leads to a loss of hydrogen from these films and results in a compacted and denser films. It has been found that in addition to hydro
Hydrogen loss from a-SiNx:H films under irradiation with 100 MeV Ag7+ ions using elastic recoil detection analysis (ERDA) experiments is reported. The results are explained under the basic assumptions of the molecular recombination model. The ERDA hy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::17283bb6a03b47aa11ad84bcebb1e787
Publikováno v:
Energy Procedia. 41:50-56
Silicon Quantum Dots (Si-QDs) embedded in dielectric matrices are being pursued as possible candidates for third generation solar cells. In this regard achieving higher QD density and control over size is of prime importance. Amorphous hydrogenated s
Publikováno v:
13th International Conference on Fiber Optics and Photonics.
Nanostructures were fabricated by femtosecond laser writing of silicon in water medium. Nanostructured Si possess very high anti-reflective property for many optoelectronics applications, such as anti-reflective coatings for solar cells, SERS etc.
Autor:
Puspendu Guha, D. Topwal, G. Vijaya Prakash, D. P. Mahapatra, Harsh Gupta, P. C. Srivastava, S. Ghosh, R. K. Bommali
Publikováno v:
Journal of Applied Physics. 124:063107
Near surface silver nanoparticles embedded in silicon oxide were obtained by 40 keV silver negative ion implantation without the requirement of an annealing step. Ion beam induced local heating within the film leads to an exodiffusion of the silver i
Autor:
P Mondal, P. C. Srivastava, Ajeet Kumar Srivastava, G. Vijaya Prakash, D. Kanjilal, S. Ghosh, R. K. Bommali
Publikováno v:
Materials Research Express. 2:046204
Silicon-rich silicon nitride (SRSN) films having two different compositions were irradiated with 100 MeV of Ni7+ ions at fluences of 5 × 1012 ions/cm2 and 1 × 1014 ions/cm2. The films, despite having different compositions, showed similar microstru