Zobrazeno 1 - 10
of 24
pro vyhledávání: '"R. K. Bagai"'
Autor:
Pingfu Fu, Omer N. Koc, Richard J. Creger, Stanton L. Gerson, Brenda W. Cooper, R. K. Bagai, R. M. Fox, D. Kane, Mary J. Laughlin, Hillard M. Lazarus, Howard J. Meyerson
Publikováno v:
Bone Marrow Transplantation. 38:189-196
We examined pre-mobilization blood CD34+ cell count to predict ability to mobilize adequate peripheral blood progenitor cells (PBPC) in 106 cancer patients and 36 allogeneic donors. Mean pre-mobilization therapy blood CD34+ cell count was 3.1 cells x
Publikováno v:
Journal of Crystal Growth. 260:148-158
In this paper, we report improvement in the crystalline quality of CdZnTe (Zn=4%) crystals, with respect to etch pit density and full-width half-maximum (FWHM) of the X-ray rocking curve, grown in graphite crucible as compared to crystals grown in ca
Autor:
J. K. Radhakrishnan, R. C. Narula, R. Raman, G. L. Seth, B. S. Sunderseshu, Meenakshi Srivastava, R. K. Bagai
Publikováno v:
Bulletin of Materials Science. 24:659-663
One of the most pressing issues in the growth of high quality single crystal Cd 0.96 Zn 0.04 Te material, is to achieve homogenization of the high axial variation of Zn concentration, caused by the larger than unity segregation coefficient of Zn in C
Publikováno v:
Bulletin of Materials Science. 18:385-394
The inherent metallurgical problems associated with the HgTe/CdTe pseudobinary alloy system render the standard crystal growth processes inapplicable to the preparation of mercury cadmium telluride crystals for infrared detector applications. A varie
Publikováno v:
Journal of Electronic Materials. 23:1349-1357
Below gap optical losses in as-grown n-type CdTe crystals were analyzed in terms of free carrier absorption and Mie extinction due to Te precipitates. Experimental absorption spectra measured between 2 to 20 μm exhibited the well-known free carrier
Autor:
B. S. Sundersheshu, Suma Gurumurthy, H L Bhat, K S R K Rao, Vikram Kumar, R. K. Bagai, A. K. Sreedhar
Publikováno v:
Bulletin of Materials Science. 17:1057-1064
Low temperature photoluminescence of vacuum and cadmium annealed CdTe:In is reported here. A new peak at similar to 1.14 eV related to transitions from the conduction band to an acceptor involving a tellurium vacancy has been observed.
Publikováno v:
Journal of Crystal Growth. 139:259-265
In this paper we present an analysis of certain unintentional dopants that arise due to spurious surface oxides on starting high purity elements and residual gases (including hydrocarbons) in the sealed quartz containers during bulk growth of CdTe cr
Publikováno v:
Journal of Electronic Materials. 21:1001-1016
A thermodynamic calculation is presented which explains the origin of often reported large stress fields in and around Te precipitates and associated punching of dislocation loops in star like patterns. The calculation is based on the consideration t
Publikováno v:
Journal of Crystal Growth. 112:402-406
Well-defined, triangular features conforming to the crystallographic orientation have been observed on the (111)Cd surface of the as-grown epilayer of Hg 1− x Cd x Te grown by isothermal vapour phase epitaxial method. It is found to be the result o
Publikováno v:
IndraStra Global.
Passivation effects in In doped n-CdTe upon exposure to rf hydrogen plasma are studied by electrical and photoluminescence measurements and were found to be maximum at about 150°C. Depth profiling by capacitance-voltage measurements show passivation