Zobrazeno 1 - 10
of 149
pro vyhledávání: '"R. Kúdela"'
Publikováno v:
AIP Advances, Vol 5, Iss 11, Pp 117205-117205-7 (2015)
We studied vortex nucleation/annihilation process and its temperature dependence in micromagnetic objects with lowered symmetry using micro-Hall magnetometry. Magnetization reversal curves were obtained for the Pacman-like nanodots placed directly on
Externí odkaz:
https://doaj.org/article/b7bd3a8f58cf41fea862a84ca5a6205a
Akademický článek
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Autor:
A. Valente, S. Sathyendranath, V. Brotas, S. Groom, M. Grant, T. Jackson, A. Chuprin, M. Taberner, R. Airs, D. Antoine, R. Arnone, W. M. Balch, K. Barker, R. Barlow, S. Bélanger, J.-F. Berthon, Ş. Beşiktepe, Y. Borsheim, A. Bracher, V. Brando, R. J. W. Brewin, E. Canuti, F. P. Chavez, A. Cianca, H. Claustre, L. Clementson, R. Crout, A. Ferreira, S. Freeman, R. Frouin, C. García-Soto, S. W. Gibb, R. Goericke, R. Gould, N. Guillocheau, S. B. Hooker, C. Hu, M. Kahru, M. Kampel, H. Klein, S. Kratzer, R. Kudela, J. Ledesma, S. Lohrenz, H. Loisel, A. Mannino, V. Martinez-Vicente, P. Matrai, D. McKee, B. G. Mitchell, T. Moisan, E. Montes, F. Muller-Karger, A. Neeley, M. Novak, L. O'Dowd, M. Ondrusek, T. Platt, A. J. Poulton, M. Repecaud, R. Röttgers, T. Schroeder, T. Smyth, D. Smythe-Wright, H. M. Sosik, C. Thomas, R. Thomas, G. Tilstone, A. Tracana, M. Twardowski, V. Vellucci, K. Voss, J. Werdell, M. Wernand, B. Wojtasiewicz, S. Wright, G. Zibordi
Publikováno v:
Earth System Science Data, Vol 14, Pp 5737-5770 (2022)
A global in situ data set for validation of ocean colour products from the ESA Ocean Colour Climate Change Initiative (OC-CCI) is presented. This version of the compilation, starting in 1997, now extends to 2021, which is important for the validation
Externí odkaz:
https://doaj.org/article/653732cca3cf4b20a6e8e19961b5cead
Publikováno v:
Journal of Applied Physics. 94:4643-4648
We propose here that sacrificial layers used in III–V technology can be utilized also as “facet-forming” sacrificial layers if the lateral etching rate of the embedded layer is close to the vertical etching rate of the basic material. The idea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::630fee3758006a3f8f1e1c9ac41ba809
https://doi.org/10.1063/1.1602570
https://doi.org/10.1063/1.1602570
Publikováno v:
Superlattices and Microstructures. 24:181-188
The technology, preparation and first characterization of a microscopic 2DEG Hall probe array are presented. The vertical heterostructure of the array based on InGaP/InGaAs/GaAs has been prepared by MOCVD. The active area of the array is placed on th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7452bc2224e75107db5587a48db03c7f
https://doi.org/10.1006/spmi.1996.0364
https://doi.org/10.1006/spmi.1996.0364
Publikováno v:
Physical Review B. 57:4642-4648
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76d06634b888125881b4ca6ba2497615
https://doi.org/10.1103/physrevb.57.4642
https://doi.org/10.1103/physrevb.57.4642
Publikováno v:
Materials Science and Engineering: B. 44:33-36
Silicon doped In0.49Ga0.51P layers were grown at 560 °C and 50 mbar by low pressure metal organic chemical vapour deposition (LP-MOCVD). A delta-doping technique was used for the doping of the InGaP layers. The sheet carrier concentration increases
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::feed60ebdf5c6a9ef9d2a26cbacf84c2
https://doi.org/10.1016/s0921-5107(96)01804-1
https://doi.org/10.1016/s0921-5107(96)01804-1
Akademický článek
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Akademický článek
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Publikováno v:
Materials science & engineering. B, Solid-state materials for advanced technology 86 (2001): 157–164. doi:10.1016/S0921-5107(01)00680-8
info:cnr-pdr/source/autori:M. Longo a; A. Parisini a; L. Tarricone a; L. Toni a; R. Kudela b/titolo:Photoluminescence investigation of Superlattice Ordering in Organometallic Vapour Phase Epitaxy grown InGaP Layers/doi:10.1016%2FS0921-5107(01)00680-8/rivista:Materials science & engineering. B, Solid-state materials for advanced technology/anno:2001/pagina_da:157/pagina_a:164/intervallo_pagine:157–164/volume:86
info:cnr-pdr/source/autori:M. Longo a; A. Parisini a; L. Tarricone a; L. Toni a; R. Kudela b/titolo:Photoluminescence investigation of Superlattice Ordering in Organometallic Vapour Phase Epitaxy grown InGaP Layers/doi:10.1016%2FS0921-5107(01)00680-8/rivista:Materials science & engineering. B, Solid-state materials for advanced technology/anno:2001/pagina_da:157/pagina_a:164/intervallo_pagine:157–164/volume:86
InGaP alloys, lattice matched to GaAs (100), were grown in different organometallic vapour phase epitaxy reactors operating at low pressure. cw-photoluminescence spectroscopy was used to investigate the role of growth temperature, substrate misorient
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::64a2c04bb90c36570bd990385ae1c21e
http://www.cnr.it/prodotto/i/176177
http://www.cnr.it/prodotto/i/176177
