Zobrazeno 1 - 10
of 338
pro vyhledávání: '"R. Kögler"'
Publikováno v:
Vacuum 78(2005)2-4, 693-697
Photoluminescence (PL) properties of 500 nm thick SiO 2 films on Si substrate subjected to combined Ge–Si implantations have been studied: Sequentially 400 keV Ge + and 200 keV Si + ions were implanted into SiO 2 to concentrations of 3% and 1–10%
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::30078f7066f131cfd9f7f1c3152a18d5
https://doi.org/10.1016/j.vacuum.2005.01.108
https://doi.org/10.1016/j.vacuum.2005.01.108
Autor:
Werner Egger, F. Börner, Werner Triftshäuser, R. Kliemann, R. Kögler, Reinhard Krause-Rehberg, F. Redmann, W. Skorupa, J. Gebauer, Gottfried Kögel
Publikováno v:
Physica B: Condensed Matter. :442-445
A strong gettering effect appears after high-energy Si self-implantation and subsequent annealing in two zones at the projected range of the silicon ions (Rp) and in a region at about Rp/2. The defects responsible for the impurity gettering at Rp/2 w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be17964e60b7591f826a35c3d78890d7
https://doi.org/10.1016/s0921-4526(01)00717-7
https://doi.org/10.1016/s0921-4526(01)00717-7
Publikováno v:
J. Appl. Phys.Vol. 86 No. 8 (1999) 4184-4187
Implantation of C ions with an energy of 195 keV into Si wafers heated up to 800 °C results in an elastic distortion of the Si host lattice and in the formation of crystalline SiC particles or their prestages depending on implantation dose and tempe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::903ceb9e4183b93481e8da675088d3d4
https://doi.org/10.1063/1.371344
https://doi.org/10.1063/1.371344
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 74:70-74
The gettering efficiency for iron of a buried carbon-rich layer formed by 10 MeV carbon implantation with doses in the range of 1014–1016 cm−2 and subsequent annealing was investigated. Iron was additionally introduced into the backside of the si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fda90d96faa2ea580bbd9b97463296b
https://doi.org/10.1016/0168-583x(93)95016-x
https://doi.org/10.1016/0168-583x(93)95016-x
Autor:
R. Kögler, J. von Borany
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 326:42-46
Low resistivity p + -contacts of silicon radiation detectors can be prepared by boron implantation into a preamorphized surface layer, produced by a germanium implantation. Already at low annealing temperature T ≤ 600°C the solid phase epitaxy of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::740d9b29c02f00d14f17cc883337b0ca
https://doi.org/10.1016/0168-9002(93)90331-b
https://doi.org/10.1016/0168-9002(93)90331-b
Publikováno v:
Radiation Effects and Defects in Solids. 118:131-135
The depth distribution of phosphorus in silicon after high energy implantation in the range of 8 to 30 MeV was investigated using spreading resistance profiling. The values for the projected ranges taken from experimentally determined charge carrier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3a4621f5221c4d6ff2d0d2174d70968
https://doi.org/10.1080/10420159108220628
https://doi.org/10.1080/10420159108220628
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 55:224-229
The gettering efficiency of silicon implanted with carbon at a dose of 1 × 1016 cm−2 and energies in the range of 0.33–10 MeV was tested by carrier lifetime measurements. After an intentional contamination of the sample back side with gold as a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::333a90fe55bd485ae752a668c83203ea
https://doi.org/10.1016/0168-583x(91)96167-j
https://doi.org/10.1016/0168-583x(91)96167-j
Publikováno v:
Applied Physics A Solids and Surfaces. 51:53-59
A model for rapid thermal annealing of high dose arsenic-implanted silicon layers is proposed. The kinetics of arsenic clustering was taken into account. Assuming that all arsenic is initially electrically active, the clustering rate is found to be e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3222064d13b230991103902feb00930a
https://doi.org/10.1007/bf00324465
https://doi.org/10.1007/bf00324465
Publikováno v:
Journal Trace Microprobe Tech. 20 (2002) 47
High-energy ion implantation in silicon leads to the formation of defects around the mean projected ion range R p. These defects are capable of collecting unwanted impurities like metal atoms. A similar effect has been observed in the depth range aro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8074d4e391d1f93a4b4895c12991f739
https://www.hzdr.de/publications/Publ-5408-1
https://www.hzdr.de/publications/Publ-5408-1
