Zobrazeno 1 - 10
of 14
pro vyhledávání: '"R. J. Zeto"'
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 14:2483-2487
We have measured the elastic stress of thin films of interest in GaAs microdevice processing, particularly for GaAs micromechanical structure fabrication. Stress was determined for films deposited directly on GaAs, in contrast to previous studies exa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e99d95ecee0b11b831d62a3c8618e1b
https://doi.org/10.1116/1.580006
https://doi.org/10.1116/1.580006
Publikováno v:
ChemInform. 22
A novel transparent electrode system has been developed for thin film electroluminescent displays in which the poor conductivity of the indium-tin-oxide (ITO) electrodes has been augmented by high-conductivity buses of thick a luminum or silver. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf924b4336482fbd7883883a70c5d282
https://doi.org/10.1002/chin.199140016
https://doi.org/10.1002/chin.199140016
Publikováno v:
Journal of The Electrochemical Society. 139:1700-1705
This paper describes reactive ion etching (RIE) techniques with silicon substrates for initial processing of semiconductor field emitter array cathodes for vacuum microelectronics. A secondary focus is process research for optical reflecting gratings
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f92dd437a880e1cea78ce3767f0ad328
https://doi.org/10.1149/1.2069480
https://doi.org/10.1149/1.2069480
Publikováno v:
Journal of The Electrochemical Society. 138:2070-2075
A novel transparent electrode system has been developed for thin film electroluminescent displays in which the poor conductivity of the indium-tin-oxide (ITO) electrodes has been augmented by high-conductivity buses of thick a luminum or silver. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88e7ccad0f3b62c61fbc991edad3ba31
https://doi.org/10.1149/1.2085926
https://doi.org/10.1149/1.2085926
Publikováno v:
Journal of Applied Physics. 69:2512-2521
This work examines the electrical behavior of metal‐oxide‐semiconductor capacitors in which positive charge has been generated in the silicon dioxide layer using either avalanche hole injection, avalanche electron injection, or Fowler‐Nordheim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff78b361393a9e385e4d5cda52d7f5fd
https://doi.org/10.1063/1.348689
https://doi.org/10.1063/1.348689
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 11:459
Two lift‐off techniques are demonstrated to form lateral field emission cathodes by shadowing a sputter deposition for tungsten composite. A current of 26 μA is observed for ‘‘knife‐edge’’ cathodes of 23 μm edge length. The I–V charac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0cba5fde743a1b6ea51d2d86ce5a0ce2
https://doi.org/10.1116/1.586884
https://doi.org/10.1116/1.586884
Publikováno v:
Journal of Applied Physics. 62:1913-1919
The behavior of the controlling feedback voltage during constant current avalanche hole injection experiments on metal‐oxide‐semiconductor capacitors has been analyzed in detail. It is concluded that at dc hole current densities greater than 50 n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa669b2affc43c8a20016bf3f6b86ad1
https://doi.org/10.1063/1.339580
https://doi.org/10.1063/1.339580
Publikováno v:
Journal of The Electrochemical Society. 132:2706-2713
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f047352f0f8a64c4aec2a915d333599
https://doi.org/10.1149/1.2113651
https://doi.org/10.1149/1.2113651
Publikováno v:
Journal of The Electrochemical Society. 127:396-399
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26776c3dba20283c5264bbdeb15f4dca
https://doi.org/10.1149/1.2129677
https://doi.org/10.1149/1.2129677
Publikováno v:
Journal of Applied Physics. 63:506-509
The thermal oxidation of InP in dry oxygen has previously been shown to result in mixed oxide layers, even when grown at pressures as high as 500 atm. This appears to be caused by the slow diffusion of P and O2 through the oxide relative to In. This
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d876eb57d8965c372f1360b64d47fa3
https://doi.org/10.1063/1.340271
https://doi.org/10.1063/1.340271