Zobrazeno 1 - 10
of 116
pro vyhledávání: '"R. J. Wagner"'
Publikováno v:
Earth and Space Science, Vol 11, Iss 9, Pp n/a-n/a (2024)
Abstract Impact craters are a unique tool not only for inferring ages of planetary surfaces and examining geological processes, but also for exploring subsurface properties. We use ejecta blankets as proxies to obtain insights into the subsurface cha
Externí odkaz:
https://doaj.org/article/15eb7d4e04ae4e7385d44b38088c52b8
Autor:
Joseph G. Tischler, S.K Singh, Benjamin V. Shanabrook, B. A. Weinstein, G. Comanescu, R. J. Wagner, B. D. McCombe, B. R. Bennett
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 13:186-189
The electronic and optical properties of InAs/GaSb heterostructures depend on the type of bonding at the interfaces, InSb bonds or GaAs bonds. We have studied cyclotron resonance (CR) in the far-infrared on two samples, each consisting of a single 30
Publikováno v:
Physical Review Letters. 79:4886-4889
We report the first measurement of room temperature carrier lifetimes at a magnetic metal--semiconductor interface, $\mathrm{Fe}/\mathrm{GaAs}(001)\ensuremath{-}(2\ifmmode\times\else\texttimes\fi{}4)$. The lifetimes are significantly enhanced relativ
Publikováno v:
Physical Review B. 56:8163-8168
We have studied the magnetic and structural properties of epitaxial bcc Fe(001) films grown at 175 C on molecular-beam epitaxy-prepared GaAs(001)-2*4 and -c(4*4) reconstructed surfaces, with film thicknesses ranging up to ~30 ML (~43 ). We present me
Publikováno v:
Superlattices and Microstructures. 21:95-99
Far infrared magneto-optical measurements have been performed on a series of InAs single quantum wells (11–30 nm) clad with thick GaSb layers where either GaAs-like or InSb-like bonds are formed at the heterointerfaces. The rich absorption spectra
Publikováno v:
The Journal of Immunology. 157:4100-4108
ISG15, a 15-kDa protein of unique primary amino acid sequence, functions intracellularly as a ubiquitin homologue and a cytokine that induces production of IFN-gamma and augments NK/lymphokine-activated killer cell proliferation and function. ISG15 i
Autor:
Brian R. Bennett, B. V. Shanabrook, Mark E. Twigg, J. L. Davis, R. J. Wagner, James R. Waterman
Publikováno v:
Solid-State Electronics. 37:733-737
The GaSb/InAs materials system, with two species of both cations and anions, permits the construction of heterostructures with either InSb- or GaAs-like interfaces. As a result, this system provides an opportunity to explore the limits of interfacial
Autor:
B. V. Shanabrook, R. J. Wagner, James R. Waterman, P. J. Lin-Chung, W. J. Moore, M. J. Yang, J. L. Davis
Publikováno v:
Surface Science. 305:271-274
We report the observation of spin-resolved cyclotron resonance of a 2DEG in an InAs quantum well. The data show that the g -factor of a 2DEG has a smaller energy dependence than that of bulk electrons. The reduction of the spin-splitting in a 2DEG ca
Publikováno v:
Physical Review B. 48:17172-17176
Vibrational Raman scattering and x-ray diffraction have been performed on GaSb/InAs superlattices. The composition of the As x Sb 1-x , plane that connects the InAs and GaSb layers has been varied by controlled growth techniques. When x is equal to 0