Zobrazeno 1 - 10
of 13
pro vyhledávání: '"R. J. Schutz"'
Publikováno v:
Physical Review Letters. 39:1480-1483
Specific heat ${C}_{p}$ and thermal conductivity $\ensuremath{\kappa}$ measurements between 0.1 and 10 K on the superconducting (${T}_{c}=2.53$ K) and structurally disordered metal ${\mathrm{Zr}}_{0.7}$${\mathrm{Pd}}_{0.3}$ exhibit an approximately l
Autor:
R. J. Schutz
Publikováno v:
Review of Scientific Instruments. 45:548-551
The thermal relaxation method is used to measure heat capacities of small samples from 0.060 to 1.2 K. The calorimeter incorporates a low heat capacity holder, and is designed to be used in conjunction with a 3He–4He dilution refrigerator. The accu
Publikováno v:
Physical Review Letters. 34:473-476
Autor:
P. A. Heimann, R. J. Schutz
Publikováno v:
Journal of The Electrochemical Society. 131:881-885
Publikováno v:
Journal of Applied Physics. 55:3514-3517
Aluminum contacts to shallow junctions in high‐performance silicon integrated circuits suffer from an inhomogeneous Al/Si interaction, which culminates in a destruction of contact and junction integrity. Certain silicides such as CoSi2, on the othe
Autor:
R. J. Schutz, L. R. Testardi
Publikováno v:
Journal of Applied Physics. 50:5773-5781
Previous results have shown, in agreement with the silicide‐growth theory of Walser and Bene, that VSi2 is the first silicide phase to nucleate and grow at single‐crystal‐Si–V interfaces. We have found that with sputtered thin‐film‐V–cr
Publikováno v:
Journal of Applied Physics. 52:5496-5500
We describe techniques for determining the strain matrix and rotation matrix of a homogeneously strained surface layer on a single‐crystal flat surface. The surface layer must retain the basic structure of the underlying undistorted crystal but may
Publikováno v:
Physical Review B. 18:3890-3896
Publikováno v:
Physical Review Letters. 30:223-226
Publikováno v:
MRS Proceedings. 4
Planar p-n junctions with Pt silicide contacts have been formed by laser irradiating p-type Si/120Å Sb/400Å Pt composite thin film structures. The samples were prepared in a standard e-beam evaporation system. They were never ion implanted. Laser p