Zobrazeno 1 - 10
of 28
pro vyhledávání: '"R. J. Roedel"'
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 8:79-83
We report a procedure for fabricating Ga/sub 1-x/Al/sub x/As-GaAs heterojunction bipolar transistors with a single Al-Ge-Ni metallization step for rapid material analysis. Al-Ge-Ni produces an excellent ohmic contact to both n- and p-type GaAs, and e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e49bbd8b4bd0bd530b591d5fd22ef7d2
https://doi.org/10.1109/66.350760
https://doi.org/10.1109/66.350760
Autor:
H. Cutlerywala, R. J. Roedel
Publikováno v:
Journal of The Electrochemical Society. 141:1639-1643
Experiments were performed to diffuse zinc into GaAs through anodic oxide layers of varying thickness and density. Using electrochemical profiling to determine both the electrically active zinc concentration and the diffusion depth with high resoluti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83d70cc9e0830dccce01f82d144cd6e9
https://doi.org/10.1149/1.2054975
https://doi.org/10.1149/1.2054975
Publikováno v:
Journal of The Electrochemical Society. 140:1450-1453
We report the results of preliminary investigations into the suitability of the metallization system, aluminum-tin-nickel, as an ohmic contact to both p-type and n-type GaAs. We have found that the Al-Sn-Ni contact is similar to Al-Ge-Ni in that it m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::959d5b3bdbd1c40c0ceb8026802c38c1
https://doi.org/10.1149/1.2221577
https://doi.org/10.1149/1.2221577
Publikováno v:
Journal of The Electrochemical Society. 138:3120-3125
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81fb32f397f7e1bc9ba9a6702c9700a3
https://doi.org/10.1149/1.2085379
https://doi.org/10.1149/1.2085379
Autor:
J. Wong, R. J. Roedel
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 9:2258-2263
A model based on the known defect structure of Hg1−xCdxTe has been developed for explaining indium diffusion in this semiconductor. Based on a charged‐vacancy mechanism, the model qualitatively predicts the correct trends for diffused samples whi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab789907f1c9558a016c17c2a9362b26
https://doi.org/10.1116/1.577305
https://doi.org/10.1116/1.577305
Publikováno v:
Journal of Electronic Materials. 19:1257-1263
Low temperature, non-alloyed Au-Ge contact formation ton-GaAs is a multi-step pro-cess. During the first 5 min of annealing at 320° C the Au and Ge segregate into regions a few microns in size and extend over the entire thickness of the metal layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e221e4a15f0bfc1c888e46edf8400188
https://doi.org/10.1007/bf02673340
https://doi.org/10.1007/bf02673340
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 8:1143-1146
The effectiveness of indium tin oxide (ITO) and silicon dioxide as encapsulants for mercury cadmium telluride (MCT) has been investigated. Indium tin oxide and silicon dioxide of various thicknesses were sputtered onto samples of MCT. Samples were th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::466db7e742a5fa8a0f802c348e410c8a
https://doi.org/10.1116/1.576976
https://doi.org/10.1116/1.576976
Publikováno v:
Scanning. 12:81-85
Extension in wavelength detection of cathodoluminescence (CL) toward the infrared is an area attracting interest regarding its development potential. This article describes our progress in CL characterization of Hg1−xCdxTe epilayers intended for op
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71978415a52c21f1ffafbb59e0d21a4a
https://doi.org/10.1002/sca.4950120206
https://doi.org/10.1002/sca.4950120206
Autor:
R. J. Roedel, H. H. Erkaya
Publikováno v:
IEEE Proceedings of the SOUTHEASTCON '91.
Planar GaAlAs/GaAs heterojunction bipolar transistors have been fabricated by using zinc diffusion to contact the p-type base and Al-Ge-Ni metallization for all ohmic contacts. The transistor structures were prepared by MOCVD (metal-organic chemical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f09a8c6c38b1d623cffb6d588151650
https://doi.org/10.1109/secon.1991.147905
https://doi.org/10.1109/secon.1991.147905
Publikováno v:
Journal of The Electrochemical Society. 132:2214-2218
Essai d'obtention de jonctions-p par une technique a basse temperature en utilisant un systeme de diffusion pour «tube de fuite» en utilisant SnS comme source de Sn a diffuser dans un support de GaAs de type p. Forte diffusion de Sn dans GaAs, sans
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35d8764649e4eb91b098e2710be94c79
https://doi.org/10.1149/1.2114321
https://doi.org/10.1149/1.2114321