Zobrazeno 1 - 2
of 2
pro vyhledávání: '"R. J. Kaplar"'
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2013:000275-000280
Commercially available, 1200 V SiC power MOSFETs have been characterized under bias-temperature stress conditions. Two generations of devices from a single manufacturer were tested. For the first-generation MOSFETs, both plastic- and metal-packaged d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ee82e05dedd9b4ad5f411df6ac7c22a
https://doi.org/10.4071/hiten-wp11
https://doi.org/10.4071/hiten-wp11
Characterization of fast interface states in nitrogen- and phosphorus-treated 4H-SiC MOS capacitors.
Publikováno v:
Semiconductor Science & Technology; Jul2015, Vol. 30 Issue 7, p1-1, 1p