Zobrazeno 1 - 10
of 31
pro vyhledávání: '"R. J. Hwu"'
Autor:
R. J. Hwu
Publikováno v:
15th International Conference on Infrared and Millimeter Waves.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e82e7e179c81418f3d71917a5e07938
https://doi.org/10.1117/12.2301673
https://doi.org/10.1117/12.2301673
Autor:
R. J. Hwu
Publikováno v:
17th International Conference on Infrared and Millimeter Waves.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db52a338c7b1c61a531e574c8aec8d83
https://doi.org/10.1117/12.2298157
https://doi.org/10.1117/12.2298157
Autor:
R. J. Hwu
Publikováno v:
17th International Conference on Infrared and Millimeter Waves.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a40346e62905c9f3df913ae1304b48d2
https://doi.org/10.1117/12.2298159
https://doi.org/10.1117/12.2298159
Autor:
R. J. Hwu
Publikováno v:
17th International Conference on Infrared and Millimeter Waves.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0be1a8bca541f4d9eb0a775567c7b078
https://doi.org/10.1117/12.2298158
https://doi.org/10.1117/12.2298158
Publikováno v:
Journal of Crystal Growth. 247:77-83
Microtwins in semi-metal thulium phosphide (TmP) epilayers grown on (0 0 1) GaAs substrates by molecular beam epitaxy have been studied by transmission electron microscopy. Selected area diffraction patterns show extra spots along 〈1 1 1〉 and 〈
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6850657115840804d3ab4cb2acfdcaa8
https://doi.org/10.1016/s0022-0248(02)01947-4
https://doi.org/10.1016/s0022-0248(02)01947-4
Publikováno v:
Journal of Materials Research. 16:3266-3273
Single-crystal thulium phosphide (TmP) was grown heteroepitaxially on (001) GaAs substrates by molecular beam epitaxy with the orientation relationship [100]TmP//[100]GaAs and {001}TmP//{001}GaAs. The crystal properties and the defects in TmP/GaAs, G
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22f7d4ccbcef5fceb6755359d7648107
https://doi.org/10.1557/jmr.2001.0450
https://doi.org/10.1557/jmr.2001.0450
Autor:
M. Patel, Laurence P. Sadwick, D. Brehmer, S.J. Allen, K. McCormick, M. Nikols, R.W. Gedridge, Jeffrey E. Shield, R. J. Hwu, D.C. Streit, P. P. Lee
Publikováno v:
Journal of Crystal Growth. 164:285-290
We report the first known study of the growth of epitaxial dysprosium phosphide (DyP) grown on gallium arsenide (GaAs). DyP is lattice matched to GaAs, with the room-temperature mismatch being less than 0.01%. We have grown DyP on GaAs by gas-source
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5500f51966f3e5cb483025e0bbe11a8
https://doi.org/10.1016/0022-0248(95)01017-3
https://doi.org/10.1016/0022-0248(95)01017-3
Autor:
R. J. Hwu, Laurence P. Sadwick
Publikováno v:
International Journal of Infrared and Millimeter Waves. 13:1145-1161
The high-frequency performance along with the optimum designs and operating conditions of near-millimeter wave quasi-optical monolithic diode-grid frequency multiplier arrays have been studied and will be presented in this paper. The limitations of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d175fe5fc1219a81a483c465e77f483a
https://doi.org/10.1007/bf01009057
https://doi.org/10.1007/bf01009057
Autor:
Laurence P. Sadwick, R. J. Hwu
Publikováno v:
IEEE Transactions on Electron Devices. 39:1805-1810
Problems of the back-to-back GaAs barrier-intrinsic-n/sup +/ (BIN) diode frequency tripler concept along with the associated device physics are presented. The back-to-back GaAs BIN diode structure was originally proposed to have an intrinsic cutoff f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d61c4599d1f5f7f057f8ddbfe348a7a7
https://doi.org/10.1109/16.144668
https://doi.org/10.1109/16.144668
Device and material properties of pseudomorphic HEMT structures subjected to rapid thermal annealing
Publikováno v:
IEEE Transactions on Electron Devices. 39:50-55
The device-related effects of rapid thermal annealing (RTA) on the electrical and optical properties of planar-doped AlGaAs/InGaAs/GaAs high-electron-mobility transistor structures grown by molecular beam epitaxy were investigated. Specifically, elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6459ac72ea15d6f1e9df04224a9dec0
https://doi.org/10.1109/16.108211
https://doi.org/10.1109/16.108211