Zobrazeno 1 - 10
of 42
pro vyhledávání: '"R. J. Hauenstein"'
Autor:
R. J. Hauenstein, M. Edirisooriya, Michael B. Santos, K. Bottoms, C. K. Gaspe, Tetsuya D. Mishima
Publikováno v:
Journal of Crystal Growth. 311:1972-1975
The small effective mass of electrons in InSb results in a high electron mobility if the densities of crystalline defects and other scattering sources are sufficiently reduced. The performance of geometrical magnetoresistors was used to confirm the h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97bdf17fb22e5633af8445e427f99f1b
https://doi.org/10.1016/j.jcrysgro.2008.11.081
https://doi.org/10.1016/j.jcrysgro.2008.11.081
Autor:
R. J. Hauenstein, O. Semchinova, F. Fedler, Sergio I. Molina, Arturo Ponce, H. Klausing, J. Graul, J. Aderhold
Publikováno v:
physica status solidi (c). :258-262
High reflectivity (>90%) distributed Bragg reflectors (DBR) have been successfully produced utilizing the AlGaN/AlN material system. We present reflectivity and XRD data of Ga-polar AlxGa1—xN/AlN Bragg reflectors grown on sapphire. High peak reflec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::619090089415df0792297974ad0da33e
https://doi.org/10.1002/pssc.200390037
https://doi.org/10.1002/pssc.200390037
Publikováno v:
Journal of Crystal Growth. 241:535-542
We report on morphological and residual-strain characteristics of high-AlN-mole-fraction N-polar AlxGa1−xN epilayers on sapphire. Nominally relaxed, thick single-alloy layers in the compositional range 0.4
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf1bd8bce83f32778bf86dce498549c8
https://doi.org/10.1016/s0022-0248(02)01324-6
https://doi.org/10.1016/s0022-0248(02)01324-6
Publikováno v:
MRS Internet Journal of Nitride Semiconductor Research. 5:167-173
Laterally resolved high resolution X-ray diffraction (HRXRD) and photoluminescence spectroscopy (PL) have been used to assess In incorporation efficiency in InxGa1−xN/GaN heterostructures grown through rf-plasma-assisted molecular beam epitaxy. Ave
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d8a2e6f36c096930b2c2f0156811f56
https://doi.org/10.1557/s1092578300004233
https://doi.org/10.1557/s1092578300004233
Autor:
B. Goldenberg, S. J. Hwang, Arthur J. Fischer, R. J. Hauenstein, R. Horning, Xincheng Xie, Michael D. Bremser, W. Shan, S. Krishnankutty, B. D. Little, D. S. Kim, W. G. Perry, J. J. Song, Robert F. Davis
Publikováno v:
Journal of Applied Physics. 83:455-461
Intrinsic excitonic transitions in GaN have been studied using a variety of spectroscopic measurements. Sharp spectral structures associated with intrinsic free excitons could be observed in photoluminescence, reflection, and absorption spectra. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ff63087a40196440b0cb9d92c808171
https://doi.org/10.1063/1.366660
https://doi.org/10.1063/1.366660
Publikováno v:
Journal of Electronic Materials. 26:1342-1348
We have investigated the nanometer-scale structure and electronic properties of nitride/arsenide superlattices produced by nitridation of a molecular beam epitaxially grown GaAs surface. Using cross-sectional scanning tunneling microscopy and spectro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c0ba0ec3042364d2902680114bb16af
https://doi.org/10.1007/s11664-997-0082-z
https://doi.org/10.1007/s11664-997-0082-z
Autor:
M. B. Johnson, M. L. O’Steen, X. M. Fang, R. J. Hauenstein, B. N. Strecker, Patrick J. McCann
Publikováno v:
Journal of Electronic Materials. 26:444-448
Crack-free PbSe on (100)-oriented Si has been obtained by a combination of liquid phase epitaxy (LPE) and molecular beam epitaxy (MBE) techniques. MBE is employed first to grow a PbSe/BaF2/CaF2 buffer structure on the (100)-oriented Si. A 2.5 μm thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81a656a697ce1e2633e88ddc109173c7
https://doi.org/10.1007/s11664-997-0117-5
https://doi.org/10.1007/s11664-997-0117-5
Autor:
R. J. Hauenstein, T. C. Collins
Publikováno v:
Zinc Oxide Materials for Electronic and Optoelectronic Device Applications
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53bd6ff7287a3a6feb2863c76cc51cf1
https://doi.org/10.1002/9781119991038.ch1
https://doi.org/10.1002/9781119991038.ch1
Publikováno v:
Applied Physics Letters. 75:2280-2282
Reflection high-energy electron diffraction (RHEED) and laterally spatially resolved high resolution x-ray diffraction (HRXRD) have been used to identify and characterize rf plasma-assisted molecular-beam epitaxial growth factors which strongly affec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8fee29f2c00ac564d2acf835079c58e
https://doi.org/10.1063/1.124990
https://doi.org/10.1063/1.124990
Autor:
R. J. Hauenstein, G. H. Park, Yong-Hoon Cho, J. J. Song, Umesh Mishra, F. Fedler, Steven P. DenBaars, Sarah L. Keller
Publikováno v:
Journal of Applied Physics. 85:3006-3008
We report the structural properties of InGaN/GaN/AlGaN multiple quantum wells (MQWs) by means of two-dimensional reciprocal space mapping (RSM) of high resolution x-ray diffraction. The influence of Si doping in GaN barriers on the characteristics ha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f6aba4e7de14079993dfae222cc69de
https://doi.org/10.1063/1.369620
https://doi.org/10.1063/1.369620