Zobrazeno 1 - 10
of 51
pro vyhledávání: '"R. J. GALE"'
Publikováno v:
Proceedings of the Institution of Civil Engineers - Ground Improvement. 3:135-144
Stabilization of a kaolinite bed by the electrochemical injection of aluminium and phosphate ions has been investigated. Electrical gradients of 2 V/cm or less constituted the predominant driving force for ion transport under a 433 µA/cm2 constant d
Autor:
D. M. Kolb, Kohei Uosaki, S. Fletcher, Shahed U. M. Khan, J. O'm. Bockris, R. J. Gale, D. J. Mazur, N. L. Weinberg
Publikováno v:
Annu. Rep. Prog. Chem., Sect. C: Phys. Chem.. 92:23-73
Publikováno v:
Vacuum. 41:1287-1290
Free-standing films of Al, AlSi (1%) and Cu, 1 μm thick, were prepared by chemical ablation from commercially produced metallizations deposited on Si/SiO 2 substrates. The films were tested at various temperatures and stresses in a specially desi
Publikováno v:
Applied Physics Letters. 56:2310-2312
A new form of testing is described that is suitable for verifying isolation in many forms of microstructures. Excess charge is deposited on the microstructures by a scanning electron microscope (SEM) beam. On elements of the microstructures that are
Publikováno v:
Free radical biologymedicine. 13(1)
A protonated, charged free radical of methylphenazine methosulfate (PMS) was generated at carbon electrodes in a buffered aqueous medium. This radical diffused from the aqueous phase into nonpolar organic solvents, where it was stable for extended pe
Autor:
Mark G. Harward, C. A. Pico, Thomas J. Aton, M. H. Bennett‐Lilley, S. S. Mahant‐Shetti, T. L. Weaver, R. J. Gale
Publikováno v:
MRS Proceedings. 181
Defect location and identification in the metallization systems of ultra-large-scale integrated (ULSI) devices is becoming increasingly important because of the demands of high device density. An understanding of the sources of defects is crucial to
Autor:
T.J. Aton, C. A. Pico, T. L. Weaver, R. J. Gale, Mark G. Harward, S. S. Mahant‐Shetti, M. H. Bennett‐Lilley
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 8:2041
We describe recent experiments using a novel method of testing isolation and continuity in microstructures using an electron beam technique. We use the beam of an unmodified scanning electron microscope (SEM) to deposit charge on microstructures typi
Publikováno v:
Analytical Chemistry. 53:1457-1460
Publikováno v:
Inorganic Chemistry. 22:130-133
Publikováno v:
Journal of Applied Physics. 51:6286-6291
The importance of specific ion adsorption and surface charge effects in the design and operation of photoelectrochemical (PEC) devices is demonstrated by experimental data on the n‐GaAs/electrolyte and n‐Si/electrolyte interface. The electrolyte