Zobrazeno 1 - 10
of 16
pro vyhledávání: '"R. J. Eyre"'
Publikováno v:
Journal of physics. Condensed matter : an Institute of Physics journal. 17(37)
Phosphorus, the current standard n-type dopant in diamond, has been correlated with isotropic, trigonal and tetragonal paramagnetic centres, suggesting that it may undergo a symmetry lowering distortion, perhaps of a Jahn-Teller type. We present firs
Publikováno v:
Physics and Applications of CVD Diamond
Diamond is a material with superlative properties in terms of carrier mobilities and device characteristics for high power electronics applications. Although p-type diamond is routinely available using boron, n-type material via impurity doping durin
Publikováno v:
physica status solidi (a). 204:2978-2984
The formation of n-type diamond has proved highly challenging, with the best species to date being the relatively deep phosphorus donor. Theory suggests that interstitial Li may be a superior donor species. In this paper we report the first principle
Publikováno v:
physica status solidi (a). 204:2903-2908
Hydrogen terminated diamonds exposed to atmosphere typically exhibit surface p-type conduction, thought to be due to transfer doping with holes in the surface valence band and negatively charged counter-ions in an adsorbed layer. The effect has been
Publikováno v:
International Journal of Toxicology. 18:269-274
In the medical device industry, risk assessment is required for product development and support, regulatory compliance, and manufacturing support. The risk assessment process can be divided into four major steps. The first step, hazard identification
Publikováno v:
Physical Review B. 80
Publikováno v:
ChemInform. 39
Publikováno v:
Physical chemistry chemical physics : PCCP. 10(30)
A key to understanding the optical characteristics of silicon quantum dots is the role of surface bonded species that introduce states to the band-gap. In particular, oxygen bonded in a silanone configuration is thought to be a source of shifts in em
Publikováno v:
Physical Review B. 77
Studies of oxidation processes of small silicon quantum dots (Si-QDs) have generally concerned either isolated surface sites or the effect of full oxide shell or hydroxyl passivation. In this study we report the results from density-functional calcul
Publikováno v:
Physical Review B. 76