Zobrazeno 1 - 10
of 11
pro vyhledávání: '"R. J. E Jansen"'
Publikováno v:
IEEE Journal of Solid-State Circuits. 48:1585-1594
This paper describes the design of an accurate and static complementary constant-gm biasing circuit for Nauta's transconductors in low-power low-frequency CMOS gm-C bandpass filters and their optimization and trimming for process and temperature inde
Publikováno v:
2015 15th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
The amount of irradiation SET injected charge into both the straight and ELT 340nm NMOS and PMOS transistor of a 180 nm Mixed-Mode CMOS technology has been measured. The radiation source has been Californium-252 and the effective LET at the transisto
Publikováno v:
IEEE Transactions on Nuclear Science. :1-1
The control area network (CAN) wired communication standard is becoming the bus of choice for many space applications. However, the severe −2 to 7 V common-mode and −3 to 16 V failure tolerance requirements of the CAN bus driver have restricted i
Autor:
R.-J. E. Jansen, J.E. Townsend, J. D. Collier, Robert G. Jones, D.F. Moore, Roger Mark Bostock
Publikováno v:
Journal of Micromechanics and Microengineering. 8:343-360
Flexible silicon nitride clips are used to hold single mode optical fibres in position in grooves etched in silicon substrates to connect either subsurface or surface mounted optical components. The fabrication process for the buried fibre connector
Publikováno v:
ESSCIRC
This paper describes the design of an accurate and simple static complementary constant-g m biasing circuit for Nauta's transconductors in low-power low-frequency CMOS g m -C bandpass filters and their optimization and trimming for process and temper
Publikováno v:
Physical Review B. 47:13401-13408
We present an analysis of the angular dependence of hot-electron transport through a zero-temperature two-dimensional electron gas (2DEG), as can be realized experimentally in semiconductor structures under applied magnetic fields. We calculate the s
Publikováno v:
Physica B: Condensed Matter. 175:49-53
Electron transport in semiconductor structures is modelled at a variety of levels of sophistication, with solutions of the nonlinear Wigner-function equation for the electron distribution being more realistic, especially when scattering and electron-
Publikováno v:
Conference Proceedings. LEOS '97. 10th Annual Meeting IEEE Lasers and Electro-Optics Society 1997 Annual Meeting.
Integrated optics will be more widely exploited when the integration of building blocks is low cost, versatile and reliable. Interconnection between active and passive components is a critical part of building such devices. We have developed a propri
Publikováno v:
Applied Physics Letters. 60:1881-1883
We analyze the scattering processes of high‐energy (approximately 0.3 eV) electrons impinging at normal incidence on a zero‐temperature two‐dimensional electron gas (2DEG), and derive an expression for the scattering probability. We proceed in
Autor:
R. J. E. Jansen, M. A. M. Gijs
Publikováno v:
Applied Physics Letters. 56:1484-1486
1‐μm‐wide Dayem bridges were patterned with a pulsed Xe laser in c‐axis‐oriented YBaCuO films prepared according to the BaF2 method. The microbridges have a critical current density of 2×106 A/cm2 at 77 K, which is typical for an epitaxial