Zobrazeno 1 - 2
of 2
pro vyhledávání: '"R. J. Carolissen"'
Autor:
William R. Graham, R. Pérez‐Sandoz, H. H. Weitering, Raymond T. Tung, R. J. Carolissen, J. P. Sullivan
Publikováno v:
Journal of Applied Physics. 79:7820-7829
We have measured current–voltage and capacitance–voltage characteristics of epitaxial Si(111)7×7–Ag, Si(111)(√3×√3)R30°–Ag, Si(100)2×1–Ag, and polycrystalline Ag/Si interfaces, using different doping levels for both n‐ and p‐typ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b8d9c6dd74d71ae5e279456330aa5d6
https://doi.org/10.1063/1.362390
https://doi.org/10.1063/1.362390
Publikováno v:
Applied Surface Science. :422-427
We have measured current-voltage (IV) characteristics of Si(111)7×7-Ag, Si(111)(√3 × √3)R30°-Ag and Si(100)2 × 1-Ag interfaces, grown in ultrahigh vacuum (UHV). Our data strongly suggest that their Schottky barrier heights (SBHs) are spatiall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90db94d1cee99ce9b980bf89892c891d
https://doi.org/10.1016/0169-4332(93)90553-n
https://doi.org/10.1016/0169-4332(93)90553-n