Zobrazeno 1 - 10
of 16
pro vyhledávání: '"R. J. Carolissen"'
Autor:
William R. Graham, R. Pérez‐Sandoz, H. H. Weitering, Raymond T. Tung, R. J. Carolissen, J. P. Sullivan
Publikováno v:
Journal of Applied Physics. 79:7820-7829
We have measured current–voltage and capacitance–voltage characteristics of epitaxial Si(111)7×7–Ag, Si(111)(√3×√3)R30°–Ag, Si(100)2×1–Ag, and polycrystalline Ag/Si interfaces, using different doping levels for both n‐ and p‐typ
Publikováno v:
Applied Surface Science. :422-427
We have measured current-voltage (IV) characteristics of Si(111)7×7-Ag, Si(111)(√3 × √3)R30°-Ag and Si(100)2 × 1-Ag interfaces, grown in ultrahigh vacuum (UHV). Our data strongly suggest that their Schottky barrier heights (SBHs) are spatiall
Autor:
Ejderha, Kadir, Turut, Abdulmecit
Publikováno v:
Journal of Electronic Materials; Dec2021, Vol. 50 Issue 12, p6741-6747, 7p
Publikováno v:
Journal of Materials Research; 04/01/1993, Vol. 8 Issue 4, p841-846, 6p
Publikováno v:
Journal of Applied Physics; Apr2009, Vol. 105 Issue 8, p083721-083728, 7p, 1 Black and White Photograph, 1 Diagram, 4 Graphs
Autor:
Weitering, H. H., Sullivan, J. P., Carolissen, R. J., Pérez-Sandoz, R., Graham, W. R., Tung, R. T.
Publikováno v:
Journal of Applied Physics; 5/15/1996, Vol. 79 Issue 10, p7820, 10p, 1 Black and White Photograph, 3 Charts, 6 Graphs
Publikováno v:
Modern Physics Letters B; Apr2016, Vol. 30 Issue 9, p-1, 10p
Autor:
TUNG, RAYMOND T.
Publikováno v:
Silicides: Fundamentals & Applications; 2000, p315-329, 15p
Autor:
Yamada, Fumihiko, Kamioka, Takefumi, Tachibana, Tomihisa, Nakamura, Kyotaro, Ohshita, Yoshio, Kamiya, Itaru
Publikováno v:
2014 IEEE 40th Photovoltaic Specialist Conference (PVSC); 2014, p3040-3042, 3p
Autor:
Bergh, Howard S., Gergen, Brian, Nienhaus, Hermann, Majumdar, Arun, Weinberg, W. Henry, McFarland, Eric W.
Publikováno v:
Review of Scientific Instruments; Apr99, Vol. 70 Issue 4, p2087, 8p, 4 Diagrams, 6 Graphs