Zobrazeno 1 - 7
of 7
pro vyhledávání: '"R. J. Aggarwal"'
Publikováno v:
Journal of Applied Physics. 84:1140-1148
A quasistatic rate-equation model for the resonant tunneling diode (RTD) is presented. In this model, the RTD is divided into three regions, each assumed in quasithermal equilibrium. The electron transfer between states in adjacent regions, assumed t
Autor:
Yung-Chung Kao, Chenjing Lucille Fernando, R. J. Aggarwal, J. W. Sleight, H. L. Tsai, W. M. Duncan, Mark A. Reed, William R. Frensley
Publikováno v:
Physical Review B. 51:10701-10708
Publikováno v:
Physical Review B. 44:5873-5876
A theoretical study of the properties of the Fermi level in semiconductor superlattices (SL's) is made which is based upon the carrier occupation of the minibands in thermal equilibrium. We find, for a fixed carrier density and temperature, that the
Publikováno v:
Applied Physics Letters. 57:707-709
We present a tunneling density of states study of the transition from a superlattice miniband to a sequential coupled well structure. We have observed by tunneling spectroscopy the eigenstates of a finite superlattice system far below the Stark local
Autor:
M. A. Reed, J. H. Luscombe, J. N. Randall, W. R. Frensley, R. J. Aggarwal, R. J. Matyi, T. M. Moore, A. E. Wetsel
Publikováno v:
Science and Engineering of One-and Zero-Dimensional Semiconductors ISBN: 9781468457353
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::021eecef52e11de744f823f098559d91
https://doi.org/10.1007/978-1-4684-5733-9_16
https://doi.org/10.1007/978-1-4684-5733-9_16
Autor:
John N. Randall, R. J. Aggarwal, Mark A. Reed, Thomas M. Moore, A. E. Wetsel, Richard J. Matyi
Publikováno v:
Physical review letters. 60(6)
Electronic transport through a three-dimensionally confined semiconductor quantum well (``quantum dot'') has been investigated. Fine structure observed in resonant tunneling through the quantum dot corresponds to the discrete density of states of a z
Autor:
John N. Randall, Thomas M. Moore, Anna E. Wetsel, William R. Frensley, James H. Luscombe, R. J. Aggarwal, Mark A. Reed, Richard J. Matyi
Publikováno v:
Advances in Solid State Physics ISBN: 9783528080358
The electronic transport through 3-dimensionally confined semiconductor quantum wells (quantum dots) is investigated and analyzed. The spectra corresponds to resonant tunneling from laterally-confined emitter contact subbands through the discrete 3-d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d123199bd916a5bcc92193b954696e7e
https://doi.org/10.1007/bfb0108017
https://doi.org/10.1007/bfb0108017