Zobrazeno 1 - 10
of 208
pro vyhledávání: '"R. Irsigler"'
Autor:
M Hornung, R. Irsigler, R. Goeppert, C. Schwarz, S. Passmore, Douglas Bryman, J.V. Cresswell, M. Rogalla, J. Andersson, J. Ludwig, K. Runge, M. Constable
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 460:72-75
Measurements of the performance of a Resistive Gate CCD will be shown and discussed. A short description of structure and layout will be followed by X-ray spectra, linearity, noise, SNR and energy resolution. A charge transfer efficiency of calculate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e05adf9778549bfb207290881f79974
https://doi.org/10.1016/s0168-9002(00)01098-6
https://doi.org/10.1016/s0168-9002(00)01098-6
Autor:
Val O'Shea, M. Östlund, Z. Fakoor-Biniaz, J. Andersson, D. Meikle, J. Alverbro, Kevin M. Smith, H. Martijn, R. Irsigler, Ch. Fröjdh, P. Helander
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 460:67-71
We report on gain and offset corrections for GaAs X-ray pixel detectors, which were hybridised to silicon CMOS readout integrated circuits (ROICs). The whole detector array contains 320×240 square-shaped pixels with a pitch of 38 μm. The GaAs pixel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3d01ecf69e1de87f742a4e5475d8b18
https://doi.org/10.1016/s0168-9002(00)01097-4
https://doi.org/10.1016/s0168-9002(00)01097-4
Autor:
J. Andersson, U. Welander, H. Stamatakis, Val O'Shea, R. Irsigler, Kevin M. Smith, C. S. Petersson, M Heuken, Richard Bates, Christer Fröjdh
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 434:18-23
Digital systems for dental X-ray imaging are rapidly replacing conventional film techniques. The major advantages of digital systems are reduced X-ray doses due to increased sensitivity, time savings since no development is needed and reduced use of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5a5e19189b86f4eed5c83805c79eeed
https://doi.org/10.1016/s0168-9002(99)00423-4
https://doi.org/10.1016/s0168-9002(99)00423-4
Autor:
Kevin M. Smith, P. Helander, R. Irsigler, Ch. Fröjdh, J. Alverbro, S. Manolopoulos, Val O'Shea, J. Borglind, J. Andersson
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 434:24-29
320×240 pixels GaAs Schottky barrier detector arrays were fabricated, hybridized to silicon readout circuits, and subsequently evaluated. The detector chip was based on semi-insulating LEC GaAs material. The square shaped pixel detector elements wer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b75f36c472721fc664e210599bcb00d
https://doi.org/10.1016/s0168-9002(99)00425-8
https://doi.org/10.1016/s0168-9002(99)00425-8
Autor:
Kevin M. Smith, S. Manolopoulos, J. Andersson, P. Helander, J. Borglind, J. Alverbro, H. Martijn, Christer Fröjdh, R. Irsigler, Val O'Shea
Publikováno v:
IEEE Transactions on Nuclear Science. 46:507-512
We present room temperature measurements on 200 /spl mu/m thick GaAs pixel detectors, which were hybridized to silicon readout circuits. The whole detector array contains 320/spl times/240 square shaped pixel with a pitch of 38 /spl mu/m and is based
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39cc5862305617e0a81d325649d4ce8f
https://doi.org/10.1109/23.775571
https://doi.org/10.1109/23.775571
Radiation damage due to pions and protons in SI-GaAs and their influence on the detector performance
Autor:
R Göppert, R. Irsigler, N. Duda, M. Battke, R. Geppert, M. Rogalla, A Söldner-Rembold, J. Ludwig, K. Runge, Th. Schmid
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 410:41-45
The bulk damage (namely the introduction rate of the arsenic antisite AsGa and its ionization ratio) was determined as a function of the non-ionizing energy loss (NIEL) of hadrons in semi-insulating GaAs. The study was performed using near-infrared a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4865b18982f22acfa0ffaac66ee0771b
https://doi.org/10.1016/s0168-9002(98)00145-4
https://doi.org/10.1016/s0168-9002(98)00145-4
Autor:
J. Meinhardt, Michael Fiederle, Y Lien, M. Rogalla, A Söldner-Rembold, R. Irsigler, R Percival, J. Ludwig, K. Runge, T Feldgen, K.W. Benz, M Hornung
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 410:92-95
Gallium Arsenide layers grown using low pressure Vapour-Phase Epitaxy (LP-VPE) were studied with CV, Hall-measurements and Photoluminescence. The results have been analysed for the general investigation of the influence of material properties on part
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d1481da330bc8cf6a0e0a0d3eb248aa
https://doi.org/10.1016/s0168-9002(98)00171-5
https://doi.org/10.1016/s0168-9002(98)00171-5
Autor:
R. Irsigler, M. Rogalla, A Söldner-Rembold, R Göppert, M Hornung, R. Geppert, J. Ludwig, K. Runge, Th. Schmid
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 410:74-78
The mobility lifetime product of holes and electrons under low electric field conditions was determined by alpha spectroscopy using SI-GaAs as a photo conductivity detector. The lifetime in high electric field (≥ 10 4 V/cm) of electrons was investi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cee0aa101a69f4e920ebbfc480275bb2
https://doi.org/10.1016/s0168-9002(98)00140-5
https://doi.org/10.1016/s0168-9002(98)00140-5
Autor:
M. Battke, W. Joerger, R. Irsigler, R. Geppert, K.W. Benz, J. Ludwig, K. Runge, Th. Schmid, N. Duda, M. Rogalla, R Göppert
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 134:53-60
The bulk damage (namely the introduction rate of the arsenic antisite AsGa and its ionisation ratio, the Fermi-level position and resistivity) was determined as a function of the non-ionising energy loss (NIEL) of hadrons in semi-insulating (SI) GaAs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12a597b0cf5616f487550cc3cd348aa1
https://doi.org/10.1016/s0168-583x(98)80033-5
https://doi.org/10.1016/s0168-583x(98)80033-5
Autor:
R. Irsigler, M. Rogalla, R. Geppert, Th. Schmid, J. Ludwig, K. Runge, M. Webel, R Göppert, C. Weber
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 395:71-75
It is commonly observed, that semi-insulating GaAs detectors show leakage current densities between 1 and several 100nA/mm2. Also the breakdown voltage of those surface barrier detectors varies between 100 and 270 V for 200 μm thick devices. Moreove
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58029a38137ec0b37bb276686e7c1d21
https://doi.org/10.1016/s0168-9002(97)00633-5
https://doi.org/10.1016/s0168-9002(97)00633-5