Zobrazeno 1 - 10
of 26
pro vyhledávání: '"R. I. Vorobey"'
Autor:
A. P. Kren, M. N. Delendik, O. V. Matsulevich, O. K. Gusev, K. U. Pantsialeyeu, R. I. Vorobey
Publikováno v:
Pribory i Metody Izmerenij, Vol 14, Iss 2, Pp 115-125 (2023)
Study of the stress field in a plastic imprint and around it is of great practical importance. Processes similar to indentation are used in shot blasting to harden the surface of materials and generate compressive stresses in the surface layers. The
Externí odkaz:
https://doaj.org/article/ca64cde2f9ae4d518791a41fedb5a71d
Autor:
R. I. Vorobey, O. K. Gusev, A. I. Zharin, V. A. Mikitsevich, K. U. Pantsialeyeu, A. V. Samarina, A. I. Svistun, A. K. Tyavlovsky, K. L. Tyavlovsky
Publikováno v:
Pribory i Metody Izmerenij, Vol 14, Iss 2, Pp 135-144 (2023)
Surface electric potential measurements are widely used in non-destructive inspection and testing of precision surfaces, for example, in the production of semiconductor devices and integrated circuits. Features of the construction and application of
Externí odkaz:
https://doaj.org/article/ee52b2927f0c4559863eabf3caa2b1c2
Autor:
K. U. Pantsialeyeu, U. A. Mikitsevich, A. I. Svistun, R. I. Vorobey, O. K. Gusev, A. L. Zharin
Publikováno v:
Pribory i Metody Izmerenij, Vol 13, Iss 4, Pp 291-301 (2022)
Surface charge can be used as an information parameter about the change in the state of the material under the action of mechanical stresses. The aim of the work was to develop methods for studying deformation processes in metallic and polymeric mate
Externí odkaz:
https://doaj.org/article/cff9c4006ddb4a838d3b83798072ff71
Autor:
R. I. Vorobey, O. K. Gusev, A. L. Zharin, K. U. Pantsialeyeu, A. I. Svistun, A. K. Tyavlovsky, K. L. Tyavlovsky, L. I. Shadurskaya
Publikováno v:
Pribory i Metody Izmerenij, Vol 12, Iss 2, Pp 108-116 (2021)
One of the ways to solve multiple problems of optical diagnostics is to use photovoltaic converters based on semiconductors with intrinsic photoconductivity slightly doped with deep impurities which form several energy levels with different charge st
Externí odkaz:
https://doaj.org/article/692ca72b53bc4e2a95c9013d14cbe1cf
Autor:
K. U. Pantsialeyeu, A. U. Krautsevich, I. A. Rovba, V. I. Lysenko, R. I. Vorobey, O. K. Gusev, A. L. Zharin
Publikováno v:
Pribory i Metody Izmerenij, Vol 8, Iss 4, Pp 386-397 (2017)
At present for analysis of the homogeneity of materials properties are becoming widely used various modifications of a scanning Kelvin probe. These methods allow mapping the spatial distribution of the electrostatic potential. Analysis of the electro
Externí odkaz:
https://doaj.org/article/42e9b5ec5a254ec8842716f814700a0c
Autor:
V. А. Pilipenko, V. A. Saladukha, V. A. Filipenya, R. I. Vorobey, O. K. Gusev, A. L. Zharin, K. V. Pantsialeyeu, A. I. Svistun, A. K. Tyavlovsky, K. L. Tyavlovsky
Publikováno v:
Pribory i Metody Izmerenij, Vol 8, Iss 4, Pp 344-356 (2017)
Introduction of submicron design standards into microelectronic industry and a decrease of the gate dielectric thickness raise the importance of the analysis of microinhomogeneities in the silicon-silicon dioxide system. However, there is very little
Externí odkaz:
https://doaj.org/article/7ce66eec3f1e4c2aaa1698b4a81a3d81
Autor:
R. I. Vorobey, O. K. Gusev, A. L. Zharin, Yu. G. Kuzminsky, A. I. Svistun, A. K. Tyavlovsky, K. L. Tyavlovsky, S. V. Shilko
Publikováno v:
Pribory i Metody Izmerenij, Vol 0, Iss 2, Pp 40-46 (2015)
The multifunctional sensor of solution type and concentration in a technological pipeline is developed on a basis of the methodology of measurements of parameters of objects with indefinite states. Theoretical and experimental results demonstrate tha
Externí odkaz:
https://doaj.org/article/3fb36dab8fa940ef920094ed1ca28544
Autor:
R. I. Vorobey, O. K. Gusev, A. L. Zharin, A. N. Petlitsky, V. A. Pilipenko, A. S. Turtsevitch, A. K. Tyavlovsky, K. L. Tyavlovsky
Publikováno v:
Pribory i Metody Izmerenij, Vol 0, Iss 2, Pp 67-72 (2015)
The matter of the study is application of contact potential difference and band bending visualization technique based on Kelvin–Ziesman technique to the non-destructive testing and defects study of a silicon-insulator structure. Experiments were he
Externí odkaz:
https://doaj.org/article/497db5f9b0ee49d9935d3e391c20f543
Autor:
S. Danyluk, A. V. Dubanevich, O. K. Gusev, A. I. Svistun, A. K. Tyavlovsky, K. L. Tyavlovsky, R. I. Vorobey, A. L. Zharin
Publikováno v:
Pribory i Metody Izmerenij, Vol 0, Iss 1, Pp 94-98 (2015)
Stray capacitance effects and their influence on Kelvin probe’s performance are studied using mathematical and computer simulation. Presence of metal surface, even grounded, in vicinity of vibrating Kelvin probe produces the additional stray signal
Externí odkaz:
https://doaj.org/article/a58049c13e964a9ea9ba630d562ac502
Autor:
R. I. Vorobey, O. K. Gusev, A. L. Zharin, A. N. Petlitsky, V. A. Pilipenko, A. S. Turtsevitch, A. K. Tyavlovsky
Publikováno v:
Pribory i Metody Izmerenij, Vol 0, Iss 2, Pp 46-52 (2015)
Improvement of repeatability and reliability of semiconductor wafers properties monitoring with a probe charge-sensitive methods is achieved by realization of Kelvin probe self-calibration mode using a wafer’s surface itself as a reference sample.
Externí odkaz:
https://doaj.org/article/38a20cde371b4a58bbf54567f9b67bb8