Zobrazeno 1 - 4
of 4
pro vyhledávání: '"R. I. Markov"'
Publikováno v:
Semiconductors. 48(2):184-190
Mass-transfer processes are investigated by the chemical analysis of gallium-arsenide surface layers after irradiation of the GaAs surface with low-intensity (13–25 mW) electromagnetic waves at a frequency of 75 GHz. The electromechanical stresses
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e77f4b8f4640288ef564c089966ae79c
http://juuli.fi/Record/0339876614
http://juuli.fi/Record/0339876614
Autor:
I. A. Markov, S.N. Dudorov, Dmitri Lioubtchenko, V. E. Lyubchenko, Antti V. Räisänen, R. I. Markov, T.A Briantseva
Publikováno v:
Radiophysics and Quantum Electronics. 50:908-912
We study the propagation parameters (attenuation and phase shift) of electromagnetic waves in the frequency range 75–110 GHz in dielectric waveguides made of high-resistivity gallium arsenide and silicon, as well as in double-layer n-i and p-n stru
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b93f8e6f935ca8719b0138b0a570f748
https://doi.org/10.1007/s11141-007-0084-y
https://doi.org/10.1007/s11141-007-0084-y
Autor:
Dmitri Lioubtchenko, V. E. Lyubchenko, Antti V. Räisänen, T.A Briantseva, R. I. Markov, I. A. Markov, S.N. Dudorov
Publikováno v:
2006 International Conference on Microwaves, Radar & Wireless Communications.
Traveling wave mode transformation in GaAs and Si dielectric rod waveguides at frequencies 75 - 110 GHz is experimentally studied. The influence of p-n and i-n junction capacitance is noticed as a varactor type component, that imposes new application
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13967075ebd89134bc3c020e14c76d57
https://doi.org/10.1109/mikon.2006.4345328
https://doi.org/10.1109/mikon.2006.4345328
Autor:
A. Z. Komanovskii, R. I. Markov
Publikováno v:
Metallurgist. 21:576-580
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8bacfd4e59580019e6872384b0940cc
https://doi.org/10.1007/bf01083203
https://doi.org/10.1007/bf01083203