Zobrazeno 1 - 10
of 39
pro vyhledávání: '"R. I. Dzhioev"'
Publikováno v:
Semiconductors. 55:726-730
Publikováno v:
Lasers. Measurements. Information. 1:4-15
Publikováno v:
IOP Conference Series: Earth and Environmental Science. 872:012005
Autor:
I. A. Akimov, S. V. Poltavtsev, D. Kudlacik, V. L. Korenev, Manfred Bayer, R. I. Dzhioev, Dmitri R. Yakovlev
We study the origin of the step-like shoulder on the high energy side of the low temperature photoluminescence spectrum of heavily $p$-doped GaAs. We show experimentally that it is controlled by the Fermi-Dirac distribution of the holes and by the en
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::41dda6f588061693e436bc5e43100686
Publikováno v:
Semiconductors. 49:1531-1535
Carrier-recombination dynamics is studied by the method of optical orientation at room temperature in the active layer of a laser diode structure. The dependence of the degree of electron-spin orientation on the excitation density is attributed to sa
Autor:
Yasufumi Fujiwara, V. L. Korenev, Leyre Gomez, Kazutomo Suenaga, I. N. Yassievich, Mikhail Nestoklon, Junhao Lin, Yu. G. Kusrayev, Tom Gregorkiewicz, R. I. Dzhioev, O. S. Ken, C. de Weerd, Serguei Goupalov, Victor F. Sapega, L. B. Matyushkin
Publikováno v:
Physical Review B, 97(23):235304. American Physical Society
We demonstrate the optical orientation and alignment of excitons in a two-dimensional layer of CsPbI$_3$ perovskite nanocrystals prepared by colloidal synthesis and measure the anisotropic exchange splitting of exciton levels in the nanocrystals. Fro
Autor:
Danil O Tolmachev, G. Cascio, V. L. Korenev, Manfred Bayer, R. W. Mocek, M. Kotur, R. I. Dzhioev, K. V. Kavokin, Dieter Suter
Publikováno v:
Physical Review B. 96
The dynamic polarization of nuclear spins by photoexcited electrons is studied in a high quality GaAs/AlGaAs quantum well. We find a surprisingly high efficiency of the spin transfer from the electrons to the nuclei as reflected by a maximum nuclear
Autor:
B. R. Namozov, V. L. Korenev, R. I. Dzhioev, Yu. G. Kusrayev, M. Kotur, P. E. Pak, K. V. Kavokin
Publikováno v:
JETP Letters. 99:37-41
A method based on the optical orientation technique was developed to measure the nuclear-spin lattice relaxation time T 1 in semiconductors. It was applied to bulk n-type GaAs, where T 1 was measured after switching off the optical excitation in magn
Publikováno v:
Physical Review B: Condensed Matter and Materials Physics (1998-2015)
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2016, 94 (8), pp.081201. ⟨10.1103/PhysRevB.94.081201⟩
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2016, 94 (8), pp.081201. ⟨10.1103/PhysRevB.94.081201⟩
We show that the spin-lattice relaxation in n-type insulating GaAs is dramatically accelerated at low magnetic fields. The origin of this effect, that cannot be explained in terms of well-known diffusion-limited hyperfine relaxation, is found in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9dccfbdd8301063afdf823474e09dcc4
https://hal.archives-ouvertes.fr/hal-01393714
https://hal.archives-ouvertes.fr/hal-01393714
Publikováno v:
Physical Review B. 93
The optical spin orientation effect in a GaAs/(Ga,Al)As quantum well containing a high-mobility 2D electron gas was found to be due to spin-polarized minority carriers, the holes. The observed oscillations of both the intensity and polarization of th