Zobrazeno 1 - 10 of 14 pro vyhledávání: '"R. I. Didyk"'
1
Mathematical model of mechanically stimulated changes of irradiated silicon crystals’ surface conductivity
Autor: R. I. Didyk, J. Shykorjak, B. Pavlyk, R. M. Lys, M. O. Kushlyk, D. P. Slobodzyan, W. Żyłka
Publikováno v: Applied Nanoscience. 10:4767-4772
Monocrystals of p-Si were used to study the changes in the electrical conductivity of silicon in the course of the action of a single-acting elastic load and X-radiation. An equation describing the dependence of the surface conductivity of irradiated
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e3b3886b592ee10f0d800c69d57c3d30
https://doi.org/10.1007/s13204-020-01300-6
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2
Features of changes in the electrical resistance of p-Si crystals under the action of an elastic one-axial mechanical load and a magnetic field
Autor: R. I. Didyk, B. Pavlyk, D. P. Slobodzyan, R. M. Lys, Josyp Shykorjak, Ivan Karbovnyk, M. O. Kushlyk
Publikováno v: Applied Nanoscience. 9:1775-1779
In thе work, changes in the surface electrical resistance of p-Si crystals were investigated under the simultaneous action of the magnetic field and elastic uniaxial deformation. It was established that a sharp decrease (leap) of resistance occurs a
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::921503642a2d86d52d84c485f305bbe2
https://doi.org/10.1007/s13204-019-00964-z
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5
Effect of elastic deformation and the magnetic field on the electrical conductivity of p-Si crystals
Autor: J. Shykorjak, B. Pavlyk, R. I. Didyk, R. M. Lys, Ivan Karbovnyk
Publikováno v: Applied Nanoscience. 8:885-890
It is shown that at a deformation rate of 0.41 kg/min, the characteristic feature of the dependence of the surface resistance of the p-Si sample on the magnitude of its elastic deformation (R(σ)) is the reduction of the resistance during compression
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::303560293ef098931cad61a39c39edae
https://doi.org/10.1007/s13204-018-0707-y
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6
Change in Surface Conductivity of Elastically Deformed p-Si Crystals Irradiated by X-Rays
Autor: R. I. Didyk, B. Pavlyk, R. M. Lys, J. Shykorjak
Publikováno v: Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-7 (2017)
Nanoscale Research Letters
Changes in conductivity of irradiated and non-irradiated p-Si mono-crystals under the influence of elastic uniaxial mechanical stress were investigated in this paper. An analytical expression was suggested to describe the dependence of surface conduc
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6024cdbb084e8aee301d5ed19966a379
http://link.springer.com/article/10.1186/s11671-017-2210-x
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7
Електрофiзичнi характеристики приповерхневих шарiв кристалiв Si p-типу, з напиленими плiвками Al, пiдданих пружнiй деформацiї
Autor: R. I. Didyk, M. O. Kushlyk, B.Y. Kulyk, Y.A. Shykorjak, B. Pavlyk, D. P. Slobodzyan
Publikováno v: Ukrainian Journal of Physics; Vol. 58 No. 8 (2013); 742
Український фізичний журнал; Том 58 № 8 (2013); 742
The deposition of Al film onto the (111) surface of a p-Si crystal was shown to induce a deformation in the near-surface layer of the latter. Provided that the crystal strain is elastic and uniaxial, the gettering of defects in the near-surface layer
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::46d20310c51b54846faad95369fcc0fb
https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018346
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8
Features of the uniaxial elastic deformation of X-ray-irradiated p-Si crystals
Autor: R. I. Didyk, J. Shykorjak, R. M. Lys, B. Pavlyk
Publikováno v: Semiconductors. 49:625-629
Changes in the conductivity of p-Si single-crystals irradiated at room temperature during their mechanical compression and stress relief are studied. It is shown that irradiation is accompanied by the generation of point defects in silicon, which pla
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::decf0cf0c8911bad45b32fbe7555a4db
https://doi.org/10.1134/s1063782615050206
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9
Quality of the p-Si crystal surface and radiation-stimulated changes in the characteristics of Bi-Si-Al surface-barrier structures
Autor: D. P. Slobodzyan, R. M. Lys, M. O. Kushlyk, R. I. Didyk, A. S. Hrypa, B. Pavlyk, J. A. Shykoryak
Publikováno v: Semiconductors. 46:993-997
The results of studying radiation-stimulated changes in the electrical characteristics of surfacebarrier structures based on p-Si with different values of resistivity (24 and 10 Ω cm) are reported. The state of the surface of the samples under study
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d60c38063de69aefdfc38cc7d6295e65
https://doi.org/10.1134/s1063782612080167
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10
The effect of a magnetic field on electrical properties of surface-barrier Bi-Si-Al structures
Autor: R. I. Didyk, R. M. Lys, A. S. Hrypa, D. P. Slobodzyan, B. Pavlyk, J. A. Shykoryak
Publikováno v: Semiconductors. 45:599-602
The effects of reconstruction of structural defects at the semiconductor-metal interface caused by a magnetic field are detected. The analysis of the current-voltage and capacitance-voltage characteristics is indicative of a magnetically stimulated i
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::449aef53404a4efacfccbda376bb91e8
https://doi.org/10.1134/s1063782611050241
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