Zobrazeno 1 - 10
of 10
pro vyhledávání: '"R. I. Bihun"'
Publikováno v:
METALLOFIZIKA I NOVEISHIE TEKHNOLOGII. 42:1629-1639
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99d285969f9a3786d80a23b322afa4d4
https://doi.org/10.15407/mfint.42.12.1629
https://doi.org/10.15407/mfint.42.12.1629
Publikováno v:
METALLOFIZIKA I NOVEISHIE TEKHNOLOGII. 41:1567-1574
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c174e2cc6d22a6885f7a37e18f018ddd
https://doi.org/10.15407/mfint.41.12.1567
https://doi.org/10.15407/mfint.41.12.1567
Publikováno v:
METALLOFIZIKA I NOVEISHIE TEKHNOLOGII. 40:931-953
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ef9dfd77a23d0ae2249b9400c0566e9
https://doi.org/10.15407/mfint.40.07.0931
https://doi.org/10.15407/mfint.40.07.0931
Publikováno v:
METALLOFIZIKA I NOVEISHIE TEKHNOLOGII. 40:601-613
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a070680edaea9f73e14de147ef5d212d
https://doi.org/10.15407/mfint.40.05.0601
https://doi.org/10.15407/mfint.40.05.0601
Publikováno v:
METALLOFIZIKA I NOVEISHIE TEKHNOLOGII. 39:743-752
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7cb628f3476342e15dfc11858fb76609
https://doi.org/10.15407/mfint.39.06.0743
https://doi.org/10.15407/mfint.39.06.0743
Publikováno v:
Radiation Effects and Defects in Solids. 172:600-609
The variation of parameters of Si-based MOS-transistors affected by combined infrared and X- ray photons processing were presented. It was found that X-ray irradiated transistor under incoherent in...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e743a8f67f1df61da1f12694cfafb863
https://doi.org/10.1080/10420150.2017.1371169
https://doi.org/10.1080/10420150.2017.1371169
Publikováno v:
METALLOFIZIKA I NOVEISHIE TEKHNOLOGII. 38:1167-1177
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1831064a655d18702ec1d43afb27120d
https://doi.org/10.15407/mfint.38.09.1167
https://doi.org/10.15407/mfint.38.09.1167
Autor:
Z. V. Stasyuk, R. I. Bihun
Publikováno v:
METALLOFIZIKA I NOVEISHIE TEKHNOLOGII. 36:723-734
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9edbbf4bbc7cd0a065825e3971935e0
https://doi.org/10.15407/mfint.36.06.0723
https://doi.org/10.15407/mfint.36.06.0723
Publikováno v:
METALLOFIZIKA I NOVEISHIE TEKHNOLOGII. 37:1203-1214
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41cc3cd2db082891d7c0993189a6734d
https://doi.org/10.15407/mfint.37.09.1203
https://doi.org/10.15407/mfint.37.09.1203
Publikováno v:
Physica B: Condensed Matter. 487:73-77
Using the Boltzmann approach we have developed one dimensional (1D) model of metal films conductivity for the quantum electron transport. Thickness fluctuation of film has an effect on the electron spectra via carriers scattering in quantum size regi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::299b59acf0f2a29a5645aaa1f7109292
https://doi.org/10.1016/j.physb.2016.02.003
https://doi.org/10.1016/j.physb.2016.02.003