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of 44
pro vyhledávání: '"R. I. Badran"'
Autor:
R. I. Badran
Publikováno v:
International Journal of Modern Physics B.
The available experimental data of field-dependent steady-state photocarrier grating (SSPG) are numerically modeled employing the derived formula of [Formula: see text] (where [Formula: see text] represents the ratio of coherent to incoherent current
Autor:
R. I. Badran, Saleha Al-Zhrani, Ahmad Umar, Yas Al-Hadeethi, Bahaaudin M. Raffah, Saleh H. Al-Heniti
Publikováno v:
Materials Express. 10:794-801
Herein, we report the high-temperature electrical characteristics of heterojunction diode fabricated based on n-Ga-doped ZnO nanowires/p-Silicon substrate. Various electronic properties such as rectification ratio, the effective barrier height, the d
ZnO Nanowalls/Si Substrate Heterojunction Assembly: Morphological, Optical and Electrical Properties
Publikováno v:
Journal of Nanoelectronics and Optoelectronics. 15:586-591
In this paper, a film of n-ZnO nanowalls was deposited over p-silicon (Si) substrate by thermally evaporating metallic zinc powder in oxygen gas environment. Several techniques were used to examine various properties of prepared ZnO nanowalls. The mo
Autor:
R. I. Badran, Ahmad Umar, Abdulrazak M. Alharbi, Bahaaudin M. Raffah, Saleh H. Al-Heniti, Yas Al-Hadeethi
Publikováno v:
Materials Express. 10:21-28
In this paper, the heterojunction diode based on n-Ga doped ZnO nanowires interconnected with disks/p-Si assembly was fabricated and their low-temperature electrical properties were examined. The Ga-doped ZnO nanowires interconnected with disks were
Autor:
R. I. Badran, Saleh H. Al-Heniti, Yas Al-Hadeethi, Asim Jilani, Ahmad Umar, M. Shahnawaze Ansari, Bahaaudin M. Raffah
Publikováno v:
Materials Express. 10:29-36
Heterojunction diode based on n-ZnO nanorods/p-Silicon (Si) assembly was fabricated, examined and reported here. Horizontal quartz tube thermal evaporation technique was used for the growth of ZnO nanorods on Si substrate. The nanorods were character
Publikováno v:
Journal of Nanoelectronics and Optoelectronics. 12:1162-1166
Publikováno v:
Journal of Nanoelectronics and Optoelectronics. 12:731-735
Publikováno v:
Journal of Nanoelectronics and Optoelectronics. 12:690-696
Autor:
R. I. Badran, Ahmad Umar
Publikováno v:
Journal of Nanoscience and Nanotechnology. 17:581-587
Herein, we report the growth and characterizations of well-crystalline n-ZnO nanowires assembled in micro flower-shaped morphologies. The nanowires are grown on p-Silicon substrate and characterized in terms of their structural, morphological and ele
Autor:
R. I. Badran, Ibrahim Al-Lehyani
Publikováno v:
Brazilian Journal of Physics. 46:341-354
Analyses of the angular distributions in the elastic scattering processes of 9, 10, 11Be by the target nucleus 64Zn at the laboratory energies of 27.95 MeV, and 4, 6, 8He by the target nucleus 208Pb at the laboratory energy of 22 MeV are performed. T